Vishay N-Channel Power MOSFET, 5.2 A Continuous Drain Current, 200 V Drain Source Voltage, 50 W Power Dissipation IRF620PBF

Vishay IRF620PBF N-Channel Power MOSFET offers robust performance with a maximum continuous drain current of 5.2 A and a drain-source voltage rating of 200 V. This device features a 3-pin TO-220AB through-hole package, facilitating versatile mounting options in mixed technology circuits.

Designed for enhancement mode operation, the MOSFET maintains a low drain-source resistance of 0.8 Ω, minimizing conduction losses in low-current applications. The device supports a power dissipation capacity of 50 W, making it suitable for sustained thermal loads when paired with appropriate heatsinking or PCB copper area.

The typical gate charge of 14 nC at a gate-source voltage of 20 V ensures moderate energy requirements for gate driving circuits, contributing to efficient switching performance in applications.

Operating temperature range from -55°C up to 150°C enables use in a broad spectrum of environments, from industrial to commercial electronic designs. The device’s maximum gate-source rating of ±20 V delivers flexibility and safety margin for gate drive circuits.

Common applications include high-voltage power supplies, motor control in small industrial drives, audio amplifiers requiring high-voltage transistors, DC-DC converters used in laboratory bench equipment, and prototype PCB assemblies for hobbyists or engineers.

3-pin TO-220AB through-hole package for reliable mounting. Low on-resistance of 0.8 Ω for reduced conduction losses. 50 W maximum power dissipation suitable for thermal stress management. Wide operating temperature range from -55°C to 150°C.

Typical gate charge of 14 nC at 20 V for efficient gate driving. Drain-source voltage rating of 200 V for high-voltage switching tasks. Continuous drain current of 5.2 A to support moderate load applications. Explore more Power MOSFETs and semiconductors on EnvMart for your industrial and electronics development projects.