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Vishay Nexperia P-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 BSH205G2R
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1mm |
| Length | 3mm |
| Model | BSH205G2R |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | BSH205G2 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.3A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 170mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 6.25W |
| Typical Gate Charge Qg @ Vgs | 3.7nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- This MOSFET operates in enhancement mode for improved performance.
- The maximum power dissipation is rated at 6.25 W, enabling reliable thermal handling.
- It has a low maximum drain-source resistance of 170 milliohms for efficient conduction.
- The device supports a wide operating temperature range from -55 °C to 150 °C.
- A gate charge of 3.7 nC at Vgs ensures efficient switching speed.
- Complies with automotive standard AEC-Q101 for high reliability.
- The compact dimensions of 3 mm length, 1.4 mm width, and 1 mm height fit dense PCB layouts.
- Maximum gate-source voltage tolerance is -8 V to +8 V, enhancing robustness.
Product Description
Vishay BSH205G2R is a high-performance P-Channel MOSFET designed to handle continuous drain currents up to 2.3 A and drain-source voltage of 20 V. Packaged in a widely used 3-pin SOT-23 surface mount construction, this transistor is ideal for compact and efficient switching applications in electronic, automotive, and industrial systems.
This enhancement mode MOSFET offers a maximum drain-source resistance of 170 milliohms, delivering low on-resistance which improves power efficiency and reduces heat dissipation. It can handle power dissipation up to 6.25 watts, making it suitable for moderately high power circuits.
The device is rated to operate reliably across a wide temperature range from -55 °C to 150 °C, ensuring stable performance in harsh environments. Its maximum gate-source voltage rating of ±8 volts ensures gate protection during circuit transients.
The gate charge of 3.7 nC supports high-speed switching, improving performance in switching regulators and load switch applications. Physically compact with a length of 3 mm, width of 1.4 mm, and height of 1 mm, it supports dense printed circuit board designs.
This MOSFET is compliant with the AEC-Q101 automotive standard, confirming suitability for automotive electronics demanding high reliability. Applications include power management, motor control, and other semiconductor switching roles in industrial and consumer electronics.
This MOSFET operates in enhancement mode for improved performance. The maximum power dissipation is rated at 6.25 W, enabling reliable thermal handling. It has a low maximum drain-source resistance of 170 milliohms for efficient conduction.
The device supports a wide operating temperature range from -55 °C to 150 °C. A gate charge of 3.7 nC at Vgs ensures efficient switching speed. Complies with automotive standard AEC-Q101 for high reliability. The compact dimensions of 3 mm length, 1.4 mm width, and 1 mm height fit dense PCB layouts.
Maximum gate-source voltage tolerance is -8 V to +8 V, enhancing robustness. Explore related MOSFET devices and power semiconductor components at EnvMart for your electronic design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.3 A.
This MOSFET has a maximum drain-source voltage of 20 V.
It is rated for a maximum power dissipation of 6.25 W.
The dimensions of this model are 3 mm in length, 1.4 mm in width, and 1 mm in height.
The typical gate charge at Vgs is 3.7 nC.
The maximum drain-source resistance is rated at 170 milliohms.
It operates reliably within a temperature range from -55 °C to 150 °C.
This model complies with the automotive standard AEC-Q101.
It is packaged in a 3-pin SOT-23 surface mount configuration.
The maximum gate-source voltage tolerance is -8 V to +8 V.
This device is a P-Channel MOSFET.
It is suitable for power management, motor control, and semiconductor switching applications in various electronic systems.
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