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Vishay N-Channel Power MOSFET, 28 A, 100 V Enhancement Mode, 8-Pin PowerPAK 1212-8 SIS892ADN-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 3.4mm |
| Model | SIS892ADN-T1-GE3 |
| Width | 3.4mm |
| Mount Type | Surface |
| Series | SiS892ADN |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212-8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 28A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 0.033Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 52W |
| Typical Gate Charge Qg @ Vgs | 6.1nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.8V |
Key Features
- This power MOSFET is designed for surface mount applications.
- It features an enhancement mode channel and a low maximum drain source resistance of 0.033 ohms.
- The maximum power dissipation rating is 52 W, allowing efficient heat management.
- The gate charge is typically 6.1 nC at a gate-source voltage of 20 V.
- Operating temperature ranges from -55°C to 150°C, suitable for demanding environments.
- Forward voltage drop is approximately 0.8 V, improving efficiency.
- Its compact dimensions of 3.4 mm x 3.4 mm x 1.12 mm support dense PCB layouts.
- Compliant with RoHS standards, ensuring environmental safety.
Product Description
Vishay SIS892ADN-T1-GE3 is a high-performance N-Channel Power MOSFET designed to handle a continuous drain current of 28 A and a drain-source voltage of 100 V. Packaged in an 8-pin PowerPAK 1212-8 surface mount form factor, it is optimized for efficient power management in industrial, electronic, and power conversion applications.
This MOSFET features an enhancement mode channel with a low on-resistance of 0.033 ohms, reducing conduction losses and enhancing overall system efficiency. The device supports a maximum power dissipation of 52 W, accommodating demanding thermal environments.
The typical gate charge of 6.1 nC at Vgs of 20 V ensures fast switching performance, critical for high frequency power electronics. The device operates reliably within a temperature range of -55°C to 150°C, making it suitable for harsh industrial environments.
Its forward voltage drop of 0.8 V further improves power efficiency, reducing energy loss during operation. The physical dimensions enable compact PCB designs, facilitating integration into power modules and assemblies.
Compliance with RoHS directives ensures that the product meets environmental safety standards, though it is not automotive-grade certified. Applications include power supply circuits, motor drivers, and industrial control systems requiring robust and efficient power switching components.
This Power MOSFET is designed for surface mount applications. Features enhancement mode operation with low on-resistance of 0.033 ohms. Maximum continuous drain current of 28 A supports high power loads. Maximum power dissipation of 52 W enables effective heat handling.
Typical gate charge of 6.1 nC allows rapid switching performance. Wide operating temperature range from -55°C to 150°C for reliability. Compact 8-pin PowerPAK 1212-8 package dimensions aid in board space saving. RoHS compliant for environmental safety.
Not certified for automotive applications but suitable for industrial use. Explore the Vishay category and similar power semiconductor solutions at EnvMart to find components tailored for your electronic design and industrial automation needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 28 A.
This power MOSFET has a maximum drain-source voltage rating of 100 V.
The typical gate charge at a gate-source voltage of 20 V is 6.1 nC.
The maximum power dissipation rating for this unit is 52 W, allowing for efficient heat management.
The dimensions of the PowerPAK 1212-8 package are 3.4 mm x 3.4 mm x 1.12 mm.
It operates reliably within a temperature range of -55°C to 150°C.
The forward voltage drop of this MOSFET is approximately 0.8 V.
This model is designed for surface mount applications.
Yes, this power MOSFET is compliant with RoHS standards, ensuring environmental safety.
It features an enhancement mode N-channel configuration.
The maximum gate-source voltage for this device is -20 V to +20 V.
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