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onsemi PowerTrench Type P-Channel MOSFET 12 V 2.6 A Enhancement Mode 3-Pin SOT-23 FDN306P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 940μm |
| Length | 2.92mm |
| Model | FDN306P |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.6A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 40mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- This enhancement mode MOSFET features 40 mΩ maximum drain-source resistance.
- It supports a maximum power dissipation of 500 mW for reliable performance.
- Operating temperature range is from -55°C to 150°C, suitable for diverse environments.
- Small gate charge of 12 nC ensures fast switching and low power loss.
- The device includes a shielded-gate structure for improved charge balance and efficiency.
- Its soft reverse recovery body diode reduces switching noise and eliminates the need for snubber circuits.
Product Description
onsemi FDN306P PowerTrench Type P-Channel MOSFET is a surface-mount device designed for efficient power switching with a maximum drain current of 2.6 A and voltage rating of 12 V. Featuring an enhancement channel mode and housed in a space-saving 3-pin SOT-23 package, it is well suited for industrial, electronic, and automotive applications where compact, reliable performance is critical.
Utilizing the advanced PowerTrench technology, this MOSFET combines a shielded-gate structure with a soft body diode that optimizes switching performance, reduces power losses, and enables replacement of higher voltage MOSFETs in synchronous rectification circuits. The device's small gate charge of 12 nC further improves system efficiency by enabling faster switching with lower power consumption.
Key electrical specifications include a maximum drain-source resistance of 40 mΩ and a maximum power dissipation of 500 mW. The MOSFET operates reliably across a broad temperature range from -55°C to 150°C, making it suitable for harsh operational environments.
Its compact physical dimensions (2.92 mm length, 1.4 mm width, and 940 μm height) facilitate integration in high-density printed circuit board designs. The package type is SOT-23 with a pin count of 3, ensuring compatibility with standard surface-mount assembly processes.
This MOSFET is optimized for use in power management, switching regulators, and synchronous rectification applications. The PowerTrench design offers enhanced charge balance and low figure of merit, improving power supply efficiency.
The soft reverse recovery diode characteristic reduces electromagnetic interference and switching losses. Suitable for electronic device manufacturers, automotive electronics, and industrial control systems. Package and pin configuration simplify integration into small and medium form factor applications.
Explore further on EnvMart for onsemi semiconductor products, MOSFETs, and power management devices for advanced electronic designs.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 2.6 A.
The maximum voltage rating of the FDN306P is 12 V.
This model supports a maximum power dissipation of 500 mW.
The dimensions of the FDN306P are 2.92 mm in length, 1.4 mm in width, and 940 μm in height.
The operating temperature range for this MOSFET is from -55°C to 150°C.
The maximum drain-source resistance for this model is 40 mΩ.
The FDN306P comes in a SOT-23 package type.
The typical gate charge for this MOSFET is 12 nC.
The channel type of the FDN306P is P-Channel.
This MOSFET is suitable for power management, switching regulators, and synchronous rectification applications.
The maximum gate-source voltage for this model is -8 V to +8 V.
The FDN306P utilizes PowerTrench technology, which enhances charge balance and reduces power losses.
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