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Infineon OptiMOS P Type P-Channel MOSFET 100 A 30 V Enhancement 8-Pin TDSON BSC030P03NS3GAUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 6.1mm |
| Model | BSC030P03NS3GAUMA1 |
| Width | 5.35mm |
| Mount Type | Surface |
| Series | OptiMOS P |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 4.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 140nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -1.1V |
Key Features
- This MOSFET supports continuous drain current up to 100 A for high-load switching applications.
- Its 125W maximum power dissipation enables handling of heavy thermal loads effectively.
- The device features a low 4.6 milliOhm drain-source resistance, minimizing conduction losses.
- Typical total gate charge of 140 nC optimizes driver sizing and switching performance.
- It operates reliably from -55°C to 150°C ambient temperatures for extreme environments.
- The 8-pin TDSON package allows efficient surface-mount integration with thermal pad support.
- It tolerates a gate-source voltage range of -25 V to +25 V, providing robust gate-drive margins.
- Forward voltage of -1.1 V influences conduction losses during synchronous rectification.
Product Description
Infineon BSC030P03NS3GAUMA1 OptiMOS P Type P-Channel MOSFET is engineered for surface-mount power-switching applications that require high current capability and wide temperature tolerance. It supports a maximum continuous drain current of 100 A and withstands drain-source voltages up to 30 V, making it suitable for mid-voltage power rail control in demanding industrial, automotive, and power management environments.
This MOSFET is housed in a compact 8-pin TDSON package with an integrated thermal pad, enabling efficient heat dissipation and reliable surface mounting. The device offers a low on-resistance of 4.6 milliOhms, which reduces conduction losses and improves system efficiency. With a maximum power dissipation rating of 125 W, it handles heavy-duty thermal loads uncompromisingly.
With a typical gate charge of 140 nC at specified gate voltage, this transistor balances drive effort and switching speed, allowing optimized driver design and switching operation. Its gate-source voltage tolerance of -25 V to +25 V ensures robust gate drive margins essential for reliable switching performance and protection against transient overvoltages.
The MOSFET maintains electrical stability and performance across a broad temperature range from -55°C to 150°C, supporting applications in harsh environments. Its forward voltage of -1.1 V affects reverse conduction losses during synchronous rectification or freewheeling modes.
Common applications include high-current power distribution modules, synchronous rectification in power supplies, battery management systems, power conversion stages, motor-drive low-side switches, and thermally stressed electronics operating under wide temperature conditions.
This MOSFET supports continuous drain currents up to 100 A for demanding power switching. Low 4.6 milliOhm Rds(on) reduces conduction losses extensively. Designed for surface-mount using an 8-pin TDSON package with thermal pad.
Gate-source voltage tolerance of ±25 V enables robust gate drive support. Operates over -55°C to 150°C temperature range for thermal resilience. Suitable for automotive, industrial, and power management applications. Explore a broad range of semiconductor and MOSFET solutions on EnvMart for your electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A, making it suitable for high-load switching applications.
It can withstand a maximum drain-source voltage of 30 V, which is appropriate for mid-voltage power rail control.
The device features a low on-resistance of 4.6 milliOhms, which helps to minimize conduction losses during operation.
The typical gate charge is 140 nC, which optimizes driver sizing and switching performance for this MOSFET.
It operates reliably within a temperature range of -55°C to 150°C, suitable for extreme environments.
This device is housed in an 8-pin TDSON package, allowing for efficient surface-mount integration with thermal pad support.
The maximum power dissipation rating is 125 W, enabling it to handle heavy thermal loads effectively.
It has a gate-source voltage tolerance of -25 V to +25 V, providing robust gate drive margins.
The forward voltage is -1.1 V, which influences conduction losses during synchronous rectification.
The dimensions are 6.1 mm in length, 5.35 mm in width, and 1.1 mm in height.
Common applications include high-current power distribution modules, synchronous rectification in power supplies, and battery management systems.
This device is a Type P channel MOSFET, designed for enhancement mode operation.
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