Infineon HEXFET N-Channel MOSFET, 24 A, 30 V, Enhancement Mode, 8-Pin SOIC IRF8788TRPBF

Infineon IRF8788TRPBF HEXFET N-Channel MOSFET is a high-performance discrete semiconductor designed to deliver efficient switching and low conduction losses in power electronic circuits. This device operates as an enhancement mode N-channel transistor with a maximum continuous drain current of 24 A and a drain-source voltage rating of 30 V, suitable for a variety of industrial and commercial applications.

The transistor features a compact SOIC package with 8 pins, enabling surface mount mounting that optimizes circuit density and thermal management. Its ultra-low drain-source resistance of 3.8 milliohms substantially minimizes power dissipation and improves system efficiency in power switching and control applications.

Engineered to withstand harsh operational environments, the device supports an operating temperature range from -55°C to 150°C, making it ideal for automotive, industrial, and consumer electronics. The maximum power dissipation rating of 2.5 W allows for reliable performance under continuous load conditions.

The typical gate charge of 44 nC at specified gate voltage ensures rapid switching capabilities, further enhancing the device's efficiency in PWM and DC-DC converter applications. The maximum gate-source voltage tolerance of ±20 V offers robust gate protection against voltage spikes and transient conditions.

Additional mechanical specifications include a device footprint of 5 mm length, 4 mm width, and 1.5 mm height, designed for seamless integration into standard printed circuit board layouts. The forward voltage drop is around 1 volt, contributing to power saving during operation.

Low on-resistance reduces conduction losses in power circuits. High current and voltage ratings enable use in demanding power applications. Surface mount SOIC package enhances assembly efficiency and space saving. Extended temperature range supports automotive and harsh environment applications.

Optimized gate charge for fast switching and improved energy efficiency. Robust gate-source voltage limits for enhanced device protection. Compact dimensions suitable for modern electronic designs. Infineon's extensive semiconductor portfolio ensures quality and reliability.

This MOSFET is widely applicable in power management, industrial automation, automotive electronics, and consumer devices where efficient switching and thermal performance are critical.

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