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Nexperia Digital Transistor 700 mA NPN, 40 V, 3-Pin SOT-23 PBRN113ET,215
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 3mm |
| Model | PBRN113ET,215 |
| Width | 2.5mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 40V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 10V |
| Maximum Collector Base Voltage VCBO | 40V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 250mW |
| Maximum DC Collector Current Idc | 700mA |
| Transistor Configuration | Single |
Key Features
- Designed for direct drive from digital sources with integrated bias resistors.
- Single transistor configuration optimized for digital switching applications.
- Maximum power dissipation of 250 mW ensures reliable operation under typical loads.
- Wide operating temperature range from -65°C to 150°C for diverse environments.
- Package dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height provide compact mounting footprint.
- Meets automotive standard AEC-Q101, suitable for automotive and industrial applications.
- NPN transistor polarity with a minimum DC current gain (hFE) of 40 for efficient current amplification.
- Safe operating voltages include max collector base voltage of 40 V and max emitter base voltage of 10 V.
Product Description
Nexperia PBRN113ET,215 is a digital transistor designed as an NPN type with a maximum DC collector current of 700 mA and maximum collector emitter voltage of 40 V. It is packaged in a small 3-pin SOT-23 surface mount package measuring 3 mm in length, 2.5 mm in width, and 1.1 mm in height.
This single transistor configuration incorporates integrated resistors allowing it to be driven directly by digital circuits, enhancing ease of use in various electronic applications. The device supports a maximum power dissipation of 250 mW, making it suitable for moderate current switching tasks.
Its reliable operation is maintained over a wide temperature range from -65°C to 150°C, meeting demanding automotive standards (AEC-Q101). The transistor features a minimum current gain of 40 (hFE) and withstands maximum collector base voltage and emitter base voltage ratings of 40 V and 10 V respectively.
This device is ideal for use in industries such as automotive electronics, industrial controls, household electronic devices, and general electronic design projects requiring compact and reliable digital transistor components.
Designed for direct drive from digital sources with integrated resistors. Single NPN transistor configuration enhancing switching performance. Maximum power dissipation rating of 250 mW ensures operational stability. Wide operating temperature range from -65°C to 150°C for harsh environments.
Compact 3-pin SOT-23 package aids in space-efficient PCB designing. Automotive standard AEC-Q101 compliance guarantees quality and reliability. Minimum DC current gain of 40 for effective signal amplification. Safe operating voltage limits protect device longevity and performance.
Surface mount package improves assembly automation and circuit density. Applicable across industrial, automotive, and consumer electronic sectors.
Explore the Digital Transistor category at EnvMart for more advanced semiconductor components and ensure your electronic designs leverage high-quality products like the Nexperia PBRN113ET,215.
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Frequently Asked Questions
The maximum DC collector current for the Nexperia PBRN113ET,215 is 700 mA.
It operates over a wide temperature range from -65°C to 150°C.
The package dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.
The maximum collector-emitter voltage (Vceo) is rated at 40 V.
The minimum DC current gain (hFE) is 40, which allows for efficient current amplification.
Yes, it meets the automotive standard AEC-Q101, ensuring quality and reliability for automotive applications.
The maximum power dissipation for this model is 250 mW, suitable for moderate current switching tasks.
This model features a single NPN transistor configuration, optimized for digital switching applications.
The maximum emitter-base voltage (VEBO) is 10 V.
It uses a surface mount type, which aids in space-efficient PCB designing.
It is suitable for applications in automotive electronics, industrial controls, household electronic devices, and general electronic design projects.
The maximum collector-base voltage (VCBO) is 40 V, ensuring safe operation under specified conditions.
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