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onsemi High Power NPN Bipolar Transistor 15 A 60 V 115 W TO-204 Through Hole 2N3055AG

Category Power Transistor Brand onsemi Condition New

Specifications

Country of Origin Mexico
Brand onsemi
Height 20.7mm
Length 39.37mm
Model 2N3055AG
Width 26.67mm
Mount Type Through Hole
Series 2N3055
Maximum Operating Temperature 200°C
Package Type TO-204
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 10
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 100V
Maximum Power Dissipation Pd 115W
Maximum DC Collector Current Idc 15A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz
STMicroelectronics 2N3055 NPN Bipolar Transistor, 15 A, 60 V, 3-Pin TO-3Brand STMicroelectronics
onsemi 2N3055G Transistor, 15 A NPN, 60 V, 2-Pin TO-204Brand onsemi

Key Features

  • Maximum power dissipation of 115 Watts allowing high power linear applications.
  • Designed for high power audio amplifiers and stepping motor controls.
  • Suitable for power switching circuits including relay and solenoid drivers.
  • High safe operating area and low saturation voltage for efficient operation.
  • Wide operating temperature range from -65°C to 200°C.
  • Single transistor configuration with NPN polarity.
  • Approved for robust use with high maximum collector base voltage of 100 V.
  • Compact dimensions with length 39.37 mm, width 26.67 mm, and height 20.7 mm.

Product Description

onsemi 2N3055AG is a high power NPN bipolar transistor engineered for demanding electronic and industrial applications. This transistor is designed to handle a maximum DC collector current of 15 A and withstand collector-emitter voltages up to 60 V, making it suitable for high power audio amplifiers, stepping motors, and various linear and switching circuits including relay and solenoid drivers.

Housed in a 2-pin TO-204 package for through-hole mounting, the 2N3055AG offers a high power dissipation capacity of 115 W, guaranteeing efficient thermal management in power-intensive scenarios. It features a high safe operating area, low saturation voltage, and a minimum DC current gain of 10, ensuring reliable performance.

This transistor operates effectively within a broad temperature range from -65°C to 200°C, enabling its use in challenging environments. Its maximum collector base voltage is rated at 100 V, and it has a maximum transition frequency of 1 MHz, suitable for many industrial and commercial applications.

Key applications include use in audio amplifiers, power switching circuits like DC-DC converters, inverters, relay drivers, and solenoid drivers. The transistor’s single NPN configuration and compact physical dimensions (39.37 mm length, 26.67 mm width, 20.7 mm height) support easy mounting and integration in electronic devices.

Manufactured in Mexico, the onsemi 2N3055AG ensures quality standards for semiconductor components. It does not carry specific automotive standards but remains widely trusted for industrial use.

Maximum power dissipation 115 W supports high-power applications. High current gain and low saturation voltage for efficient switching. Robust thermal and voltage ratings for industrial environments. TO-204 package provides secure through-hole mounting.

Wide temperature operating range ensures versatility.

This product is categorized under Power Transistors suitable for electronic and electrical engineering projects, industrial controls, and power management solutions. Explore more products in the Power Transistor category at EnvMart for comprehensive solutions tailored to your technical requirements.

onsemi High Power NPN Bipolar Transistor 15 A 60 V 115 W TO-204 Through Hole 2N3055AG
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