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onsemi Power NPN Bipolar Transistor, 17 A, 250 V, 150 W, 3-Pin TO-264 FJL4315OTU

Category Power Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 46mm
Length 20mm
Model FJL4315OTU
Width 5mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-264
Minimum Operating Temperature -50°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 250V
Minimum DC Current Gain hFE 55
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 250V
Maximum Power Dissipation Pd 150W
Maximum DC Collector Current Idc 17A
Transistor Configuration Single
Maximum Transition Frequency ft 30MHz

Key Features

  • Power transistor in TO-264 package suited for through-hole mounting.
  • Maximum power dissipation of 150 W ensures reliable thermal handling.
  • NPN transistor configuration designed for single transistor applications.
  • Temperature operating range from -50°C to 150°C for versatile environments.
  • High collector base voltage and collector emitter voltage ratings at 250 V.
  • Minimum DC current gain (hFE) is 55, supporting efficient amplification.
  • Maximum transition frequency of 30 MHz for high frequency switching.
  • Pin count of 3 pins for easy PCB insertion and connectivity.

Product Description

onsemi FJL4315OTU Power NPN Bipolar Transistor is a robust discrete semiconductor device suitable for various power electronic applications that demand significant current and voltage handling capacity with reliable thermal performance. Featuring a maximum DC collector current of 17 A and a maximum collector emitter voltage of 250 V, this transistor is engineered for high load and switching duties.

The transistor comes in a TO-264 package allowing efficient heat dissipation through a through-hole mount design, ideal for industrial and power supply circuits. Its power dissipation rating of 150 W ensures safe operation under demanding conditions. The NPN type configuration enables use in wide-ranging amplification and switching circuits.

Designed to operate in temperatures ranging from -50°C to 150°C, it is dependable in harsh and varied environmental conditions, making it suitable for industrial, manufacturing equipment, and HVAC systems. The device's minimum DC current gain of 55 ensures good signal amplification performance and stable operation.

The maximum frequency of 30 MHz makes it suitable for moderately high-frequency switching applications. Compact dimensions (46 mm height, 20 mm length, and 5 mm width) provide good integration flexibility on printed circuit boards where space is critical. The device features 3 pins simplifying assembly and electric connections.

Power transistor in TO-264 package suited for through-hole mounting. Maximum power dissipation of 150 W ensures reliable thermal handling. NPN transistor configuration designed for single transistor applications. Temperature operating range from -50°C to 150°C for versatile environments.

High collector base voltage and collector emitter voltage ratings at 250 V. Minimum DC current gain (hFE) is 55, supporting efficient amplification. Maximum transition frequency of 30 MHz for high frequency switching. Compact dimensions: 46 mm height, 20 mm length, 5 mm width for space saving circuit design.

Pin count of 3 pins for easy PCB insertion and connectivity.

This transistor is well suited to applications in industrial equipment, power supplies, manufacturing devices, embedded systems, and automotive electronics (non-automotive certified). It provides reliable performance for designers requiring a robust, economical power transistor for discrete circuit solutions.

Explore more onsemi semiconductor devices and Power Transistor solutions on EnvMart for all your industrial and electronic component needs.

onsemi Power NPN Bipolar Transistor, 17 A, 250 V, 150 W, 3-Pin TO-264 FJL4315OTU
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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) for this model is 250 V.

This transistor has a maximum power dissipation rating of 150 W.

It operates within a temperature range from -50°C to 150°C.

This model features a pin count of 3, simplifying PCB insertion and connectivity.

The maximum DC collector current (Idc) for this transistor is 17 A.

The minimum DC current gain (hFE) is 55, which supports efficient amplification.

The maximum transition frequency (ft) is 30 MHz, making it suitable for high-frequency switching applications.

It comes in a TO-264 package, which is suited for through-hole mounting.

This model features an NPN transistor configuration designed for single transistor applications.

The dimensions are 46 mm in height, 20 mm in length, and 5 mm in width.

The maximum emitter base voltage (VEBO) is 5 V.

It is suitable for use in industrial equipment, power supplies, manufacturing devices, embedded systems, and automotive electronics (non-automotive certified).

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