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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 46mm |
| Length | 20mm |
| Model | FJL4315OTU |
| Width | 5mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-264 |
| Minimum Operating Temperature | -50°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 250V |
| Minimum DC Current Gain hFE | 55 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 250V |
| Maximum Power Dissipation Pd | 150W |
| Maximum DC Collector Current Idc | 17A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 30MHz |
onsemi FJL4315OTU Power NPN Bipolar Transistor is a robust discrete semiconductor device suitable for various power electronic applications that demand significant current and voltage handling capacity with reliable thermal performance. Featuring a maximum DC collector current of 17 A and a maximum collector emitter voltage of 250 V, this transistor is engineered for high load and switching duties.
The transistor comes in a TO-264 package allowing efficient heat dissipation through a through-hole mount design, ideal for industrial and power supply circuits. Its power dissipation rating of 150 W ensures safe operation under demanding conditions. The NPN type configuration enables use in wide-ranging amplification and switching circuits.
Designed to operate in temperatures ranging from -50°C to 150°C, it is dependable in harsh and varied environmental conditions, making it suitable for industrial, manufacturing equipment, and HVAC systems. The device's minimum DC current gain of 55 ensures good signal amplification performance and stable operation.
The maximum frequency of 30 MHz makes it suitable for moderately high-frequency switching applications. Compact dimensions (46 mm height, 20 mm length, and 5 mm width) provide good integration flexibility on printed circuit boards where space is critical. The device features 3 pins simplifying assembly and electric connections.
Power transistor in TO-264 package suited for through-hole mounting. Maximum power dissipation of 150 W ensures reliable thermal handling. NPN transistor configuration designed for single transistor applications. Temperature operating range from -50°C to 150°C for versatile environments.
High collector base voltage and collector emitter voltage ratings at 250 V. Minimum DC current gain (hFE) is 55, supporting efficient amplification. Maximum transition frequency of 30 MHz for high frequency switching. Compact dimensions: 46 mm height, 20 mm length, 5 mm width for space saving circuit design.
Pin count of 3 pins for easy PCB insertion and connectivity.
This transistor is well suited to applications in industrial equipment, power supplies, manufacturing devices, embedded systems, and automotive electronics (non-automotive certified). It provides reliable performance for designers requiring a robust, economical power transistor for discrete circuit solutions.
Explore more onsemi semiconductor devices and Power Transistor solutions on EnvMart for all your industrial and electronic component needs.
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