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onsemi PNP Power Transistor 10 A, 60 V, 3-Pin TO-220 Package D45H8G

Category Power Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 30.02mm
Length 10.53mm
Model D45H8G
Width 4.83mm
Mount Type Through Hole
Series D45H
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -60V
Minimum DC Current Gain hFE 40
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc -10A
Transistor Configuration Single
Maximum Transition Frequency ft 40MHz

Key Features

  • The transistor supports a maximum power dissipation of 2 watts.
  • It operates between temperatures of -55°C to 150°C suitable for various industrial applications.
  • Features a minimum DC current gain (hFE) of 40 for reliable amplification.
  • Designed with a 3-pin through-hole mount configuration in a TO-220 package.
  • Maximum transition frequency of 40 MHz for high-speed switching.
  • Emitter base voltage rated at maximum 5 volts ensuring performance safe margins.

Product Description

onsemi D45H8G is a PNP power transistor housed in a 3-pin TO-220 package designed for through-hole mounting. It features a robust maximum DC collector current of 10 amps and withstands collector emitter voltages up to 60 volts, making it suitable for power amplification and switching applications in various industrial and electronic circuits.

The transistor delivers reliable performance with a minimum DC current gain (hFE) of 40 and operates efficiently with a maximum power dissipation of 2 watts. It supports operating temperatures ranging from -55°C to 150°C, accommodating harsh environments commonly encountered in industrial electronics.

The component's maximum transition frequency of 40 MHz enables high-frequency switching, ideal for applications requiring rapid response times. The emitter base voltage rating of 5 volts ensures stable transistor function within electrical design limits.

Dimensionally, this transistor measures 30.02 mm in height, 4.83 mm in width, and 10.53 mm in length, offering a compact form factor for circuit board integration. Typical applications include industrial power control, amplification stages, and electronic switching where efficiency and robustness are essential.

The transistor supports a maximum collector current of 10 A. Collector emitter voltage tolerance is up to 60 V. Power dissipation of 2 watts allows moderate power handling. Thermal operating range from -55°C to 150°C for versatile environment use.

Minimum current gain (hFE) of 40 ensures amplification quality. 3-pin TO-220 through-hole mounting package enables easy physical assembly. Compact physical dimensions aid in space-constrained applications. Explore the comprehensive range of semiconductor components and Power Transistors at EnvMart, designed to meet demanding industrial and electronic design requirements.

onsemi PNP Power Transistor 10 A, 60 V, 3-Pin TO-220 Package D45H8G
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Frequently Asked Questions

The maximum DC collector current for this model is 10 A.

This transistor has a maximum collector-emitter voltage rating of 60 V.

It supports a maximum power dissipation of 2 watts.

The operating temperature range is from -55°C to 150°C.

The minimum DC current gain (hFE) is 40.

This model is housed in a TO-220 package.

It features a 3-pin configuration for mounting.

The maximum transition frequency is 40 MHz.

It is designed for through-hole mounting.

The height of this transistor is 30.02 mm.

It measures 4.83 mm in width and 10.53 mm in length.

This transistor is suitable for power amplification and switching applications in various industrial and electronic circuits.

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