onsemi PNP Power Transistor 6 A, 100 V, 3-Pin TO-263 Surface Mount MJB42CT4G

onsemi MJB42CT4G is a PNP power transistor delivering a maximum collector current of 6 A and a collector-emitter voltage of 100 V. It is housed in a compact TO-263 surface mount package, ideal for electronic power applications requiring efficient switching and amplification.

This transistor features a max power dissipation rating of 65 W and operates reliably over a temperature range from -65°C to 150°C. The device offers a minimum DC current gain (hFE) of 15, supporting stable linear operation in power circuits.

Automotive qualification to the AEC-Q101 standard underscores its suitability for automotive and industrial environments demanding enhanced reliability and robustness under harsh conditions.

Its surface mount configuration facilitates space-saving circuit layouts while its 3-pin design simplifies integration in bipolar transistor applications. Typical use cases include industrial power control, automotive electronics, HVAC systems, and other applications requiring high power bipolar transistors with robust performance.

Rated for maximum DC collector current of 6 A ensuring high current handling. Collector emitter voltage rating of 100 V suitable for medium power applications. Surface mount package type TO-263 enables compact board integration.

Maximum power dissipation of 65 W allowing effective thermal management. Automotive qualified with AEC-Q101 standard for reliable performance. Wide operating temperature range from -65°C to 150°C supports harsh environments.

Minimum DC current gain (hFE) of 15 ensures good amplification characteristics. Small footprint dimensions: 10.29 mm length, 4.83 mm width, and 0.63 mm height. Designed as a single PNP transistor with 3 pins for simplified circuit design.

Explore onsemi Power Transistors in the Electronics & Electricals category at EnvMart for high quality semiconductor components.