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onsemi PNP Power Transistor, Maximum DC Collector Current -6 A, Collector Emitter Voltage -100 V, 3-Pin DPAK MJD42CT4G

Category Power Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.41mm
Length 0.27mm
Model MJD42CT4G
Width 0.09mm
Mount Type Surface
Series MJD42CG
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -100V
Minimum DC Current Gain hFE 15
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 100V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 20W
Maximum DC Collector Current Idc -6A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Designed for high power switching applications.
  • Provides a maximum power dissipation rating of 20 W.
  • Supports operating temperatures from -65°C to 150°C.
  • Features a transition frequency of 1 MHz.
  • Automotive qualified to the AEC-Q101 standard.
  • Compact TO-252 package suitable for surface mounting.
  • Single transistor configuration with PNP polarity.
  • Minimum DC current gain (hFE) of 15 ensures efficient amplification.

Product Description

The onsemi MJD42CT4G is a high-performance PNP Power Transistor designed for a broad range of industrial and automotive applications. Rated for a maximum DC collector current of -6 A and a maximum collector emitter voltage of -100 V, this transistor provides reliable switching and amplification in demanding conditions.

Packaged in a compact 3-pin DPAK (TO-252) surface mount package, the component offers efficient thermal management with a power dissipation of up to 20 W, making it suitable for power control circuits, motor drivers, and power management modules.

Its operating temperature range spans from -65°C to 150°C, ensuring stable functionality in harsh environments, including automotive electronics. The transistor's maximum transition frequency of 1 MHz supports high-speed switching applications.

This device conforms to the automotive AEC-Q101 standard, confirming its reliability and robustness for automotive-grade usage. The minimum DC current gain of 15 enhances the device's amplification capability while maintaining low losses.

The MJD42CT4G's single PNP transistor configuration and three-pin mounting design simplify circuit integration, while the surface mount package enables streamlined PCB layout and assembly. Its compact dimensions (Height 0.41 mm, Length 0.27 mm, Width 0.09 mm) minimize PCB space consumption.

Designed for high power switching applications. Provides a maximum power dissipation rating of 20 W. Supports operating temperatures from -65°C to 150°C. Features a transition frequency of 1 MHz. Automotive qualified to the AEC-Q101 standard.

Compact TO-252 package suitable for surface mounting. Single transistor configuration with PNP polarity. Minimum DC current gain (hFE) of 15 ensures efficient amplification. Three-pin design facilitates easy integration into circuits.

This onsemi transistor is ideal for industrial power control, automotive electronics, and other demanding electrical systems. Explore more power semiconductors and related electronic components on EnvMart for your design and manufacturing needs.

onsemi PNP Power Transistor, Maximum DC Collector Current -6 A, Collector Emitter Voltage -100 V, 3-Pin DPAK MJD42CT4G
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Frequently Asked Questions

The maximum DC collector current for this model is -6 A.

The maximum collector-emitter voltage (Vceo) is -100 V.

It has a maximum power dissipation rating of 20 W.

This model supports operating temperatures from -65°C to 150°C.

The maximum transition frequency is 1 MHz, suitable for high-speed switching applications.

It comes in a compact TO-252 package, which is suitable for surface mounting.

The minimum DC current gain (hFE) is 15, which ensures efficient amplification.

This model has a 3-pin configuration, facilitating easy integration into circuits.

Yes, it is automotive qualified to the AEC-Q101 standard.

The maximum emitter-base voltage (VEBO) is 5 V.

The width is 0.09 mm and the height is 0.41 mm.

It is designed for high power switching applications, including power control circuits and motor drivers.

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