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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.41mm |
| Length | 0.27mm |
| Model | MJD42CT4G |
| Width | 0.09mm |
| Mount Type | Surface |
| Series | MJD42CG |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -100V |
| Minimum DC Current Gain hFE | 15 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 100V dc |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 20W |
| Maximum DC Collector Current Idc | -6A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
The onsemi MJD42CT4G is a high-performance PNP Power Transistor designed for a broad range of industrial and automotive applications. Rated for a maximum DC collector current of -6 A and a maximum collector emitter voltage of -100 V, this transistor provides reliable switching and amplification in demanding conditions.
Packaged in a compact 3-pin DPAK (TO-252) surface mount package, the component offers efficient thermal management with a power dissipation of up to 20 W, making it suitable for power control circuits, motor drivers, and power management modules.
Its operating temperature range spans from -65°C to 150°C, ensuring stable functionality in harsh environments, including automotive electronics. The transistor's maximum transition frequency of 1 MHz supports high-speed switching applications.
This device conforms to the automotive AEC-Q101 standard, confirming its reliability and robustness for automotive-grade usage. The minimum DC current gain of 15 enhances the device's amplification capability while maintaining low losses.
The MJD42CT4G's single PNP transistor configuration and three-pin mounting design simplify circuit integration, while the surface mount package enables streamlined PCB layout and assembly. Its compact dimensions (Height 0.41 mm, Length 0.27 mm, Width 0.09 mm) minimize PCB space consumption.
Designed for high power switching applications. Provides a maximum power dissipation rating of 20 W. Supports operating temperatures from -65°C to 150°C. Features a transition frequency of 1 MHz. Automotive qualified to the AEC-Q101 standard.
Compact TO-252 package suitable for surface mounting. Single transistor configuration with PNP polarity. Minimum DC current gain (hFE) of 15 ensures efficient amplification. Three-pin design facilitates easy integration into circuits.
This onsemi transistor is ideal for industrial power control, automotive electronics, and other demanding electrical systems. Explore more power semiconductors and related electronic components on EnvMart for your design and manufacturing needs.
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