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onsemi NPN Power Transistor 6 A, 100 V dc, Surface Mount, TO-263 Package NJVMJB41CT4G

Category Power Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 15.88mm
Length 10.29mm
Model NJVMJB41CT4G
Width 4.83mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type TO-263
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 100V dc
Minimum DC Current Gain hFE 15
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 100V dc
Maximum Power Dissipation Pd 65W
Maximum DC Collector Current Idc 6A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Provides a maximum power dissipation of 65W to handle high power conditions.
  • Features a minimum DC current gain (hFE) of 15 for efficient switching.
  • Operates reliably between -65°C to 150°C for wide temperature ranges.
  • Single transistor configuration with 3 pins for easy PCB integration.
  • Designed for industrial and commercial applications requiring robust bipolar transistors.
  • Compact dimensions of 15.88mm height, 10.29mm length, and 4.83mm width enable space-saving designs.
  • Supports a maximum transition frequency (ft) of 1MHz suitable for medium frequency applications.

Product Description

onsemi NJVMJB41CT4G is a high-performance NPN power transistor tailored for surface mount technology applications. It features a maximum DC collector current of 6 A and a maximum collector-emitter voltage of 100 V dc, making it suitable for medium power electronic circuits.

The transistor’s TO-263 package ensures excellent mounting stability and thermal conduction, with a maximum power dissipation rating of 65W allowing efficient heat management under demanding electrical load conditions.

This transistor features a minimum DC current gain of 15, supporting effective amplification and switching tasks. It supports operating temperatures ranging from -65°C to 150°C, making it applicable in diverse industrial and commercial environments requiring robust thermal performance.

With a single transistor configuration and a 3-pin layout, it integrates easily into printed circuit boards designed for power control and switching functions. Additionally, its maximum transition frequency of 1MHz enables use in moderate frequency electronics and power management stages.

The compact dimensions of 15.88mm height, 10.29mm length, and 4.83mm width contribute to space-efficient device designs. Designed without automotive qualification and with no specific certifications, the NJVMJB41CT4G focuses on versatile power transistor usage across electronics sectors.

Provides maximum power dissipation capability of 65W for high power applications. Wide operating temperature range from -65°C to 150°C ensures reliability. Surface mount TO-263 package suitable for modern PCB assembly processes.

Maximum voltage ratings of 100 V dc (Vceo) and 100 V dc (Vcbo) enable safe operation under specified voltage stresses. Minimum DC current gain of 15 supports steady transistor operation. 3-pin configuration suited for bipolar transistor applications and designs.

Compact size enhances integration into space-sensitive applications and systems.

This transistor is highly suited for varied industrial applications including power management in commercial electronics, industrial control systems, and semiconductor discrete components needs. It enables engineers and designers to build robust, efficient electronics supporting medium power operation with reliable thermal and electrical performance.

Discover more on Power Transistors and related semiconductor components at EnvMart for your industrial and laboratory requirements.

onsemi NPN Power Transistor 6 A, 100 V dc, Surface Mount, TO-263 Package NJVMJB41CT4G
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Frequently Asked Questions

The maximum power dissipation of this model is 65W, allowing it to handle high power conditions effectively.

It operates reliably between -65°C and 150°C, making it suitable for a wide range of industrial and commercial applications.

The maximum collector-emitter voltage (Vceo) for this transistor is 100V dc, ensuring safe operation under specified voltage conditions.

This model features a 3-pin configuration, which is designed for easy integration into printed circuit boards.

The minimum DC current gain (hFE) is 15, which supports effective amplification and switching tasks.

The dimensions of the NJVMJB41CT4G are 15.88mm in height, 10.29mm in length, and 4.83mm in width, allowing for space-saving designs.

It comes in a TO-263 package, which is suitable for surface mount technology and provides excellent mounting stability.

The maximum DC collector current is 6 A, making it suitable for medium power electronic circuits.

The maximum transition frequency (ft) is 1MHz, which is suitable for medium frequency applications.

This model is designed without automotive qualification and is not specified for automotive applications.

The maximum emitter-base voltage (VEBO) is 5V, which is important for ensuring safe operation.

It is designed for industrial and commercial applications requiring robust bipolar transistors, particularly in power management and control systems.

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