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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 15.88mm |
| Length | 10.29mm |
| Model | NJVMJB41CT4G |
| Width | 4.83mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 100V dc |
| Minimum DC Current Gain hFE | 15 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 100V dc |
| Maximum Power Dissipation Pd | 65W |
| Maximum DC Collector Current Idc | 6A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
onsemi NJVMJB41CT4G is a high-performance NPN power transistor tailored for surface mount technology applications. It features a maximum DC collector current of 6 A and a maximum collector-emitter voltage of 100 V dc, making it suitable for medium power electronic circuits.
The transistor’s TO-263 package ensures excellent mounting stability and thermal conduction, with a maximum power dissipation rating of 65W allowing efficient heat management under demanding electrical load conditions.
This transistor features a minimum DC current gain of 15, supporting effective amplification and switching tasks. It supports operating temperatures ranging from -65°C to 150°C, making it applicable in diverse industrial and commercial environments requiring robust thermal performance.
With a single transistor configuration and a 3-pin layout, it integrates easily into printed circuit boards designed for power control and switching functions. Additionally, its maximum transition frequency of 1MHz enables use in moderate frequency electronics and power management stages.
The compact dimensions of 15.88mm height, 10.29mm length, and 4.83mm width contribute to space-efficient device designs. Designed without automotive qualification and with no specific certifications, the NJVMJB41CT4G focuses on versatile power transistor usage across electronics sectors.
Provides maximum power dissipation capability of 65W for high power applications. Wide operating temperature range from -65°C to 150°C ensures reliability. Surface mount TO-263 package suitable for modern PCB assembly processes.
Maximum voltage ratings of 100 V dc (Vceo) and 100 V dc (Vcbo) enable safe operation under specified voltage stresses. Minimum DC current gain of 15 supports steady transistor operation. 3-pin configuration suited for bipolar transistor applications and designs.
Compact size enhances integration into space-sensitive applications and systems.
This transistor is highly suited for varied industrial applications including power management in commercial electronics, industrial control systems, and semiconductor discrete components needs. It enables engineers and designers to build robust, efficient electronics supporting medium power operation with reliable thermal and electrical performance.
Discover more on Power Transistors and related semiconductor components at EnvMart for your industrial and laboratory requirements.
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