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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 37.8mm |
| Length | 20.3mm |
| Model | MJL21196G |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | MJL21196 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-264 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 250V |
| Minimum DC Current Gain hFE | 25 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 400V dc |
| Maximum Power Dissipation Pd | 200W |
| Maximum DC Collector Current Idc | 16A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
onsemi MJL21196G is a high-performance NPN power transistor housed in a TO-264 package, designed for efficient power switching and amplification applications. It delivers a maximum collector current of 16 A and a collector-emitter voltage rating of 250 V, enabling reliable operation in demanding industrial and electronic circuits.
This transistor supports through-hole mounting with a 3-pin configuration, facilitating easy integration into PCB assemblies. It boasts a powerful dissipation capacity of 200 W, suitable for managing substantial power loads without degradation.
The device exhibits a collector base voltage maximum of 400 V DC and a minimal DC current gain threshold of 25, ensuring stable performance across a wide range of operating conditions. Its operating temperature range from -65°C to 150°C supports durability in harsh environments.
Mechanical dimensions include a height of 37.8 mm, length of 20.3 mm, and width of 5.3 mm, providing a compact footprint conducive for a variety of electronic designs. The maximum transition frequency is rated at 1 MHz, making it suitable for moderate frequency applications.
Designed for high power dissipation up to 200 W. Three-pin through-hole TO-264 package. 16 A maximum collector current and 250 V collector-emitter voltage. Wide operating temperature from -65°C to 150°C. NPN transistor polarity with single transistor configuration.
Compact mechanical dimensions and robust electrical ratings. Maximum collector base voltage of 400 V DC. Minimum DC current gain hFE of 25.
This power transistor is ideal for use in industrial electronics, power amplifiers, switching circuits, and other applications demanding reliable high current and voltage handling. It is compatible with various manufacturing and assembly processes due to its standard packaging and mount style.
Explore more on onsemi Power Transistors and related semiconductor products to empower your design and manufacturing projects efficiently at EnvMart.
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