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onsemi NPN Power Transistor 16 A 250 V TO-264, 3-Pin, 200 W MJL21196G

Category Power Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 37.8mm
Length 20.3mm
Model MJL21196G
Width 5.3mm
Mount Type Through Hole
Series MJL21196
Maximum Operating Temperature 150°C
Package Type TO-264
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 250V
Minimum DC Current Gain hFE 25
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 400V dc
Maximum Power Dissipation Pd 200W
Maximum DC Collector Current Idc 16A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Designed for high power dissipation up to 200 W.
  • Features 3-pin through-hole mounting structure.
  • Maximum collector base voltage of 400 V DC for robust operation.
  • Operates within temperature range of -65°C to 150°C.
  • Minimum DC current gain (hFE) of 25.
  • Maximum transition frequency of 1 MHz.
  • Single transistor configuration with NPN polarity.

Product Description

onsemi MJL21196G is a high-performance NPN power transistor housed in a TO-264 package, designed for efficient power switching and amplification applications. It delivers a maximum collector current of 16 A and a collector-emitter voltage rating of 250 V, enabling reliable operation in demanding industrial and electronic circuits.

This transistor supports through-hole mounting with a 3-pin configuration, facilitating easy integration into PCB assemblies. It boasts a powerful dissipation capacity of 200 W, suitable for managing substantial power loads without degradation.

The device exhibits a collector base voltage maximum of 400 V DC and a minimal DC current gain threshold of 25, ensuring stable performance across a wide range of operating conditions. Its operating temperature range from -65°C to 150°C supports durability in harsh environments.

Mechanical dimensions include a height of 37.8 mm, length of 20.3 mm, and width of 5.3 mm, providing a compact footprint conducive for a variety of electronic designs. The maximum transition frequency is rated at 1 MHz, making it suitable for moderate frequency applications.

Designed for high power dissipation up to 200 W. Three-pin through-hole TO-264 package. 16 A maximum collector current and 250 V collector-emitter voltage. Wide operating temperature from -65°C to 150°C. NPN transistor polarity with single transistor configuration.

Compact mechanical dimensions and robust electrical ratings. Maximum collector base voltage of 400 V DC. Minimum DC current gain hFE of 25.

This power transistor is ideal for use in industrial electronics, power amplifiers, switching circuits, and other applications demanding reliable high current and voltage handling. It is compatible with various manufacturing and assembly processes due to its standard packaging and mount style.

Explore more on onsemi Power Transistors and related semiconductor products to empower your design and manufacturing projects efficiently at EnvMart.

onsemi NPN Power Transistor 16 A 250 V TO-264, 3-Pin, 200 W MJL21196G
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Frequently Asked Questions

The MJL21196G has a maximum collector current rating of 16 A.

This model has a maximum collector-emitter voltage rating of 250 V.

It supports a maximum power dissipation of 200 W.

The operating temperature range is from -65°C to 150°C.

This model features a through-hole mounting structure with a 3-pin configuration.

The minimum DC current gain (hFE) is 25.

The maximum transition frequency is rated at 1 MHz.

The dimensions are 37.8 mm in height, 20.3 mm in length, and 5.3 mm in width.

The maximum collector-base voltage is 400 V DC.

This model features NPN transistor polarity.

It is suitable for use in industrial electronics, power amplifiers, and switching circuits.

The country of origin for this transistor is India.

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