onsemi NPN Power Transistor 16 A 250 V 200 W TO-247 3-Pin Through Hole MJW21196G

onsemi MJW21196G is a high-power NPN transistor designed for industrial and electronic applications requiring robust switching and amplification capabilities. It supports a maximum DC collector current of 16 A and withstands voltages up to 250 V between collector and emitter, making it suitable for power regulation and electronic control circuits.

The device is housed in a TO-247 package featuring 3 pins and is intended for through-hole mounting, facilitating ease of integration into various PCB layouts. The transistor offers a power dissipation capability of up to 200 W, ensuring efficient thermal management within operational limits.

Electrical characteristics include a maximum collector base voltage of 400 V dc, a minimum DC current gain (hFE) of 8, and a maximum emitter base voltage of 5 V. With a maximum transition frequency of 1 MHz, the MJW21196G supports relatively high-speed switching applications.

Its operational temperature range spans from -65°C to 150°C, suitable for demanding industrial environments. The transistor's physical dimensions - 41.91 mm height, 16.26 mm length, and 5.3 mm width - are optimized for standard power transistor applications.

This transistor is ideal for use in power supplies, motor drives, and industrial control systems. It is a single NPN transistor configuration, ensuring straightforward circuit implementation. The device does not carry any specific automotive standards or approvals but adheres to general semiconductor manufacturing quality.

Package type: TO-247, known for excellent heat dissipation characteristics. Pin configuration: 3-pin layout compatible with various high-power circuit designs.

onsemi products are widely used in industrial electronics for durable and reliable semiconductor performance. Browse more Power Transistors and bipolar transistors in the EnvMart electronics category for precise component selection.