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onsemi PNP Power Transistor, Maximum DC Collector Current 10 A, Collector Emitter Voltage 60 V, TO-220 Package MJE2955TG
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 30.02mm |
| Length | 10.53mm |
| Model | MJE2955TG |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -60V |
| Minimum DC Current Gain hFE | 5 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 70V |
| Maximum Power Dissipation Pd | 75W |
| Maximum DC Collector Current Idc | -10A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 2MHz |
| STMicroelectronics Transistor, 10 A PNP, 60 V, 3-Pin TO-220Brand | STMicroelectronics |
Key Features
- Maximum DC collector current of 10 A for robust load handling.
- Collector to emitter voltage rating of 60 V suitable for power switching.
- TO-220 package type for efficient heat dissipation and easy mounting.
- Single transistor configuration with PNP polarity.
- Maximum power dissipation of 75 W supports high power applications.
- Wide operating temperature range from -55°C to 150°C ensures reliability.
- Three-pin through-hole mount suitable for various circuit board designs.
- Minimum DC current gain of 5 providing sufficient amplification.
Product Description
The onsemi MJE2955TG is a high power PNP bipolar transistor designed to handle collector currents up to 10 amperes and voltages up to 60 volts in a robust TO-220 package. This transistor is ideal for industrial, electronic, and power supply applications requiring efficient switching and amplification.
This device supports a maximum power dissipation of 75 watts, making it well suited for medium-power amplification and switching circuits. Its configuration as a single PNP transistor with three pins enables straightforward integration in through-hole mount PCB designs.
With a wide operating temperature range from -55°C to 150°C, the MJE2955TG provides reliable performance in demanding thermal environments commonly found in industrial and automotive electronics.
The transistor features a minimum DC current gain (hFE) of 5 and maximum collector-base voltage of 70 V, ensuring stable operation and switching performance under rugged conditions. It also has a maximum transition frequency of 2 MHz, adequate for many power and switching applications.
Maximum DC collector current of 10 A for high load capacity. Collector to emitter voltage rating of 60 V suitable for power circuits. TO-220 package allows effective heat management. PNP polarity with single transistor architecture.
Maximum power dissipation 75 W for heavy-duty usage. Wide temperature range for reliable operation. Through-hole mount with 3 pins for easy PCB design. Minimum current gain hFE of 5 for amplification. Compact dimensions for space-efficient applications.
This transistor serves a variety of sectors including electronics manufacturing, power supply systems, HVAC control, industrial automation, and automotive electronics. Its powerful specifications and dependable design provide engineers and technicians a versatile component when designing Power Transistors circuits.
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Frequently Asked Questions
The MJE2955TG can handle a maximum DC collector current of 10 A, making it suitable for robust load handling in various applications.
The collector-emitter voltage rating for the MJE2955TG is 60 V, which is suitable for power switching applications.
This transistor supports a maximum power dissipation of 75 W, allowing it to be used in medium-power amplification and switching circuits.
The operating temperature range for this model is from -55°C to 150°C, ensuring reliable performance in demanding environments.
The MJE2955TG comes in a TO-220 package type, which facilitates efficient heat dissipation and easy mounting on circuit boards.
This transistor features a three-pin configuration, suitable for through-hole mounting in various circuit board designs.
The MJE2955TG has a minimum DC current gain (hFE) of 5, providing sufficient amplification for various applications.
The dimensions of the MJE2955TG are 30.02 mm in height, 10.53 mm in length, and 4.83 mm in width.
The maximum transition frequency for this transistor is 2 MHz, which is adequate for many power and switching applications.
This model uses a single PNP transistor configuration, making it easy to integrate into various circuits.
The maximum collector-base voltage (VCBO) for the MJE2955TG is 70 V, allowing it to operate effectively in power circuits.
The MJE2955TG is suitable for applications in electronics manufacturing, power supply systems, HVAC control, industrial automation, and automotive electronics.
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