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| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 2.3mm |
| Length | 6.5mm |
| Model | 2SA2039-TL-E |
| Width | 9.5mm |
| Mount Type | Surface |
| Series | 2SA2039 |
| Maximum Operating Temperature | 150°C |
| Package Type | TP-FA |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -50V |
| Minimum DC Current Gain hFE | 200 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -6V |
| Maximum Collector Base Voltage VCBO | -50V |
| Maximum Power Dissipation Pd | 15W |
| Maximum DC Collector Current Idc | -5A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 360MHz |
onsemi 2SA2039-TL-E is a PNP power transistor engineered for applications requiring a maximum collector current of 5 A and a collector emitter voltage of 50 V. Packaged in a 3-pin TP-FA surface mount, this transistor features a single transistor configuration optimized for power handling.
The transistor offers a maximum power dissipation rating of 15 W and ensures reliable performance up to an operating temperature of 150°C. It maintains a minimum DC current gain (hFE) of 200, enabling efficient amplification capabilities in power circuits. With a maximum transition frequency of 360 MHz, the 2SA2039-TL-E is well suited for high-frequency switching tasks in industrial and electronic applications.
Dimensionally compact, measuring 6.5 mm in length, 9.5 mm in width, and 2.3 mm in height, this component is designed for surface mount technology, facilitating automated PCB assembly in manufacturing. Its transistor polarity is PNP, supporting specific circuit design requirements for polarity and switching.
This transistor does not carry automotive certifications but is sourced from China, ensuring quality and performance suitable for various industrial, consumer electronic, and power management uses. The 3-pin TP-FA package enhances thermal dissipation and electrical performance, making it a reliable choice for power amplification and switching applications.
This transistor supports a maximum power dissipation of 15 W. Provides a minimum DC current gain (hFE) of 200. Offers a high transition frequency of 360 MHz for fast switching applications. Can operate at temperatures up to 150 degrees Celsius.
Designed for surface mounting and suitable for power amplification tasks. Featuring a compact size with 6.5 mm length, 9.5 mm width, and 2.3 mm height. Supports voltage ratings of -50 V for collector-base and -6 V for emitter-base.
Ideal for use in consumer electronics, power management, and industrial circuits. Explore our extensive catalog for additional semiconductor components and Power Transistors tailored to your manufacturing and electronic assembly needs.
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