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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 10.41mm |
| Length | 6.7mm |
| Model | ZXTN4004KTC |
| Width | 6.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 150V |
| Minimum DC Current Gain hFE | 60 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 7V |
| Maximum Collector Base Voltage VCBO | 150V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 3.8W |
| Maximum DC Collector Current Idc | 1A |
| Transistor Configuration | Single |
DiodesZetex ZXTN4004KTC Bipolar Power Transistor is designed for industrial and automotive applications requiring reliable medium power switching and amplification. With a maximum DC collector current of 1 A and a maximum collector-emitter voltage of 150 V, it efficiently handles moderate power loads. The transistor is housed in a compact TO-252 surface mount package with 3 pins, suitable for automated PCB assembly.
This NPN transistor has a minimum DC current gain (hFE) of 60, ensuring good amplification characteristics, and can dissipate up to 3.8 W power. Its operating ambient temperature ranges from -55°C to 150°C, making it suitable for harsh environmental conditions.
Package dimensions are precise with 6.7 mm width and length, and a height of 10.41 mm, making it a space-efficient component. The device complies with automotive standard AEC-Q101, supporting use in automotive electronic control units and other rigorous applications.
Applications include industrial motor control, power management circuits, signal amplification, switching circuits in consumer electronics, and automotive electronic modules. The transistor features a single NPN configuration and is surface mountable, aligning with modern PCB manufacturing processes to enhance production efficiency.
This transistor supports a maximum DC collector current of 1 A. It has a maximum collector-emitter voltage of 150 V suitable for medium power applications. The device is mounted using a surface mount method in TO-252 packaging.
Typical current gain (hFE) is minimum 60 for efficient transistor operation. It can dissipate maximum power of 3.8 W under standard conditions. Operating temperature range extends from -55°C to a maximum of 150°C for reliable performance.
The transistor configuration is single, with NPN polarity. Package dimensions are approximately 6.7 mm width and length, and 10.41 mm height. Built to automotive AEC-Q101 standard, ensuring quality and reliability in automotive electronics.
Explore our Electronics & Electricals section for more semiconductor devices including diodes, bipolar transistors, and power transistors suitable for industrial, laboratory, automotive, and manufacturing applications.
Explore more products in our Bipolar Power Transistors category.
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