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STMicroelectronics NPN Power Transistor 10 A 60 V 20 W Surface Mount TO-252 Package MJD3055T4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.38mm |
| Length | 6.7mm |
| Model | MJD3055T4 |
| Width | 10.4mm |
| Mount Type | Surface |
| Series | MJD3055 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | 0°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 5 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 70V |
| Maximum Power Dissipation Pd | 20W |
| Maximum DC Collector Current Idc | 10A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 2MHz |
Key Features
- Maximum DC collector current of 10 amperes ensures high power handling.
- Maximum collector-emitter voltage rating of 60 volts supports robust operation.
- Surface mount TO-252 package allows compact layout on the PCB.
- Power dissipation rating of 20 watts enables effective thermal management.
- Three-pin transistor configuration suitable for varied circuit designs.
- High maximum transition frequency of 2 MHz for fast switching applications.
- Wide operating temperature range from 0°C to 150°C for reliability.
- NPN polarity transistor facilitating easy integration in power circuits.
Product Description
STMicroelectronics MJD3055T4 is a high-performance NPN power transistor designed for demanding industrial, automotive, and electronic applications. It is rated to handle a maximum DC collector current of 10 A and a collector-emitter voltage of 60 V, making it ideal for power switching and amplification tasks.
The transistor features a surface mount TO-252 package which offers efficient heat dissipation with a maximum power dissipation of 20 W. This package type enables space-saving PCB design suitable for compact electronic assemblies.
MJD3055T4 supports reliable operation across a temperature range of 0°C to 150°C, suitable for a variety of environments including industrial controls, automotive electronics, and consumer devices requiring durable bipolar transistors.
The device provides a minimum DC current gain (hFE) of 5 and a maximum transition frequency of 2 MHz, allowing for efficient high-frequency switching operations in power management circuits.
Its three-pin configuration and NPN transistor polarity support standard circuit architectures. The transistor's physical dimensions (6.7 mm length, 10.4 mm width, and 2.38 mm height) facilitate precise layout and integration within designs demanding reliable power components.
Typical applications include power regulators, motor control, audio amplifiers, and switching circuits in industrial and consumer products. The MJD3055 series from STMicroelectronics is known for robust performance and consistent quality.
Maximum DC collector current: 10 A. Maximum collector-emitter voltage: 60 V. Package: TO-252, surface mount. Power dissipation: 20 W. NPN transistor polarity. Operating temperature: 0°C to 150°C. Minimum DC current gain (hFE): 5.
Maximum transition frequency: 2 MHz. Dimensions: 6.7 x 10.4 x 2.38 mm. Explore reliable Bipolar Power Transistors like MJD3055T4 on EnvMart to support your projects in industrial, automotive, and electronic power system applications.
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Frequently Asked Questions
The MJD3055T4 has a maximum DC collector current of 10 A.
This model has a maximum collector-emitter voltage rating of 60 V.
It has a power dissipation rating of 20 W, which enables effective thermal management.
The operating temperature range for the MJD3055T4 is from 0°C to 150°C.
This transistor comes in a surface mount TO-252 package.
The maximum transition frequency for the MJD3055T4 is 2 MHz, suitable for fast switching applications.
It features a three-pin configuration, making it suitable for various circuit designs.
The minimum DC current gain (hFE) for the MJD3055T4 is 5.
The dimensions of this model are 6.7 mm in length, 10.4 mm in width, and 2.38 mm in height.
Typical applications include power regulators, motor control, audio amplifiers, and switching circuits.
The MJD3055T4 is an NPN polarity transistor, facilitating easy integration in power circuits.
The maximum emitter-base voltage (VEBO) for the MJD3055T4 is 5 V.
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