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onsemi NPN Power Transistor 10 A 80 V 36 W TO-220 3-Pin Through Hole MJF44H11G

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onsemi NPN Power Transistor 10 A 80 V 36 W TO-220 3-Pin Through Hole MJF44H11G

Name: onsemi NPN Power Transistor 10 A 80 V 36 W TO-220 3-Pin Through Hole MJF44H11G
Brand: onsemi
SKU: 371153
Price: 1.38 USD
Availability: InStock

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Category Bipolar Power Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.18mm
Length	10.63mm
Model	MJF44H11G
Width	4.9mm
Mount Type	Through Hole
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	80V
Minimum DC Current Gain hFE	60
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	10V dc
Maximum Power Dissipation Pd	36W
Maximum DC Collector Current Idc	10A
Transistor Configuration	Single
Maximum Transition Frequency ft	20MHz

Key Features

The transistor uses NPN polarity suitable for power applications.
It features a maximum collector-emitter voltage (Vceo) of 80 V and a maximum collector-base voltage (Vcbo) of 10 V DC.
The maximum power dissipation rating is 36 W ensuring reliable thermal performance.
Minimum DC current gain (hFE) is 60 for efficient current amplification.
Operating temperature range spans from -55°C to 150°C allowing diverse environmental use.
The maximum transition frequency is 20 MHz supporting moderate frequency switching.
It has a compact 3-pin TO-220 height of 1.18 mm, length 10.63 mm, and width 4.9 mm suitable for PCB applications.
Designed primarily as a single transistor configuration for discrete bipolar power scenarios.

Product Description

onsemi MJF44H11G is a NPN bipolar power transistor designed for robust electronic and electrical applications requiring up to 10 A collector current and 80 V collector-emitter voltage. Packaged in a TO-220 3-pin form factor for through-hole mounting, this transistor provides reliable switching and amplification in power circuits.

This transistor supports a maximum power dissipation rating of 36 W, enabling efficient thermal handling during operation. Its minimum DC current gain (hFE) of 60 ensures effective current amplification for various power control uses.

The transistor is engineered to operate across a wide temperature range of -55°C to 150°C, making it suitable for challenging industrial environments including automotive electronics, industrial motor controls, power supplies, and other power semiconductor applications.

Physical dimensions include a compact height of 1.18 mm, length of 10.63 mm, and width of 4.9 mm, enabling its integration into space-constrained printed circuit boards. The 3-pin configuration supports straightforward connection and mounting.

The transistor uses NPN polarity for positive switching applications. Maximum collector-emitter voltage rating is 80 V, providing safety margin in high voltage applications. Collector-base voltage maximum is 10 V DC. Emitter-base maximum voltage is 5 V.

The maximum transition frequency is 20 MHz, suitable for moderate speed switching tasks. It is not automotive standard certified but retains reliability for industrial uses.

This component is ideal for industrial, electronic equipment manufacturing, power supply design, and other commercial applications requiring reliable and efficient high-current transistors.

Choose onsemi MJF44H11G for a durable, efficient, and industry-standard NPN power transistor suitable for a wide range of electronic component needs. Explore more on EnvMart’s semiconductor and bipolar power transistor selections for comprehensive industrial component solutions.

Explore more products in our Bipolar Power Transistors category.