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onsemi NPN Power Transistor, 6 A Collector Current, 100 V dc Voltage, 65 W Dissipation, TO-263 Package NJVMJB41CT4G

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onsemi NPN Power Transistor, 6 A Collector Current, 100 V dc Voltage, 65 W Dissipation, TO-263 Package NJVMJB41CT4G

Name: onsemi NPN Power Transistor, 6 A Collector Current, 100 V dc Voltage, 65 W Dissipation, TO-263 Package NJVMJB41CT4G
Brand: onsemi
SKU: 371161
Price: 0.88 USD
Availability: InStock

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Category Bipolar Power Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	15.88mm
Length	10.29mm
Model	NJVMJB41CT4G
Width	4.83mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	TO-263
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	100V dc
Minimum DC Current Gain hFE	15
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	100V dc
Maximum Power Dissipation Pd	65W
Maximum DC Collector Current Idc	6A
Transistor Configuration	Single
Maximum Transition Frequency ft	1MHz

Key Features

Maximum DC collector current rated at 6 A ensuring significant power handling capabilities.
Collector-emitter voltage of 100 V dc supports robust switching operations.
Power dissipation capability up to 65 W for efficient thermal management.
Transistor features a minimum DC current gain hFE of 15 and maximum transition frequency of 1 MHz.
Designed with 3 pins and configured as a single NPN transistor suitable for discrete semiconductor applications.
Operating temperature range from -65°C to 150°C permits use in demanding environments.
Compact dimensions with height 15.88 mm, width 4.83 mm, and length 10.29 mm for PCB space efficiency.
Surface mount package type TO-263 enables easy assembly and integration.

Product Description

onsemi NJVMJB41CT4G NPN Power Transistor is a high-performance discrete semiconductor designed for power switching and amplification applications. It supports a maximum DC collector current of 6 A and a collector-emitter voltage of 100 V dc, delivering reliable operation in industrial and commercial electronic circuits.

The device is housed in a TO-263 surface mount package, which facilitates effective thermal dissipation and efficient PCB mounting in compact designs. This transistor is configured as a single NPN type and comes with three pins, making it suitable for discrete bipolar transistor roles in power regulation, switching, and motor control applications.

With a power dissipation rating of 65 W, it is suitable for demanding environments requiring robust power management. It offers a minimum DC current gain (hFE) of 15 and operates up to a maximum transition frequency of 1 MHz for moderate frequency switching.

The operating temperature range from -65°C to 150°C ensures reliability across a wide spectrum of industrial, automotive (non-AEC-Q101 compliant), and electronic manufacturing use cases. The precise dimensions (height 15.88 mm, width 4.83 mm, length 10.29 mm) support integration in space-constrained designs.

Maximum collector current: 6 A. Collector-emitter voltage: 100 V dc. Power dissipation: 65 W. Minimum DC current gain hFE: 15. Surface mount TO-263 package. Operating temperature range: -65°C to 150°C. Transition frequency: 1 MHz maximum.

Height: 15.88 mm, Width: 4.83 mm, Length: 10.29 mm.

This transistor is ideal for applications in power supplies, switching regulators, motor control, and general discrete semiconductor roles in electronics manufacturing. It provides reliable performance consistent with onsemi's quality standards.

Explore our wide range of semiconductor components and Bipolar Power Transistors on EnvMart for industrial and commercial electronics solutions.