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DiodesZetex Bipolar Power Transistor, NPN, 6 A, 60 V, 4-Pin SOT-223 ZX5T851GTA

Category Bipolar Power Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.65mm
Length 6.55mm
Model ZX5T851GTA
Width 7.1mm
Mount Type Surface
Series ZX5TX
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 20
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 150V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 12.8W
Maximum DC Collector Current Idc 6A
Transistor Configuration Single
Maximum Transition Frequency ft 130MHz
onsemi NSV40301MZ4G NPN Transistor, 3 A, 40 V, 3 + Tab-Pin SOT-223Brand ON Semiconductor

Key Features

  • Packaged in a 4-pin SOT-223 surface mount package.
  • Supports a maximum collector-base voltage of 150 V and emitter-base voltage of 7 V.
  • Maximum power dissipation rated at 12.8 W for reliable operation.
  • Operating temperature range from -55°C to 150°C ensures durability in harsh environments.
  • Has a minimum DC current gain (hFE) of 20 and transition frequency of 130 MHz.
  • Designed to automotive standard AEC-Q101 for quality assurance.
  • Compact physical dimensions with length 6.55 mm, width 7.1 mm, height 1.65 mm.
  • Ideal for power switching, amplification and other semiconductor applications.

Product Description

DiodesZetex ZX5T851GTA Bipolar Power Transistor is an NPN transistor designed for robust and efficient performance in electronic circuits.

This device supports a maximum collector current of 6 amperes and can sustain voltages up to 60 volts between collector and emitter, making it suitable for medium power applications.

The transistor is housed in a 4-pin SOT-223 surface mount package, offering easy PCB integration and compact design. It has a high maximum collector-base voltage of 150 volts and an emitter-base voltage rating of 7 volts.

The transistor dissipates up to 12.8 watts of power, enabling it to handle substantial load conditions while maintaining thermal stability. Its frequency characteristic supports up to 130 MHz, making it suitable for switching and amplification in RF applications.

The device meets stringent automotive quality standard AEC-Q101 and operates reliably across a wide temperature range from -55°C to 150°C. Typical applications include power amplification, switching in DC-DC converters, and general purpose electronic circuits where power handling and reliability are critical.

Packaged in a 4-pin SOT-223 surface mount configuration. Maximum collector current of 6 A and voltage of 60 V. High power dissipation rating of 12.8 W. Automotive standard AEC-Q101 certified for quality and reliability. Operating temperature range -55°C to 150°C.

Compact dimensions: length 6.55 mm, width 7.1 mm, height 1.65 mm. Transition frequency up to 130 MHz for switching applications. This transistor is a premium choice for designers in industrial, automotive, and consumer electronics seeking a reliable power transistor solution.

Explore our extensive range of semiconductor components and power transistors on EnvMart for your electronic design needs.

Explore more products in our Bipolar Power Transistors category.

DiodesZetex Bipolar Power Transistor, NPN, 6 A, 60 V, 4-Pin SOT-223 ZX5T851GTA
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Frequently Asked Questions

The maximum collector current for the ZX5T851GTA is 6 amperes.

This model supports a maximum collector-emitter voltage of 60 volts.

The maximum power dissipation rated for this transistor is 12.8 watts.

It operates reliably across a temperature range from -55°C to 150°C.

The transition frequency of the ZX5T851GTA is up to 130 MHz.

This transistor has compact dimensions: length 6.55 mm, width 7.1 mm, and height 1.65 mm.

The ZX5T851GTA is packaged in a 4-pin SOT-223 surface mount package.

Yes, it is designed to meet the automotive standard AEC-Q101 for quality assurance.

The minimum DC current gain (hFE) for the ZX5T851GTA is 20.

This model supports a maximum collector-base voltage of 150 volts.

The maximum emitter-base voltage (VEBO) for the ZX5T851GTA is 7 volts.

It is suitable for power switching, amplification, and other semiconductor applications.

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