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| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 46mm |
| Length | 20.5mm |
| Model | 2SA1943-O(Q) |
| Width | 5.2mm |
| Mount Type | Through Hole |
| Series | 2SA1943 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-3PL |
| Minimum Operating Temperature | 0°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -230V |
| Minimum DC Current Gain hFE | 35 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -230V |
| Maximum Power Dissipation Pd | 150W |
| Maximum DC Collector Current Idc | -15A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 30MHz |
Toshiba 2SA1943-O(Q) PNP Power Transistor is designed for high power applications with a maximum power dissipation of 150 watts, suitable for industrial and commercial electronics projects. This transistor supports up to 15 amperes of collector current and can handle collector emitter voltage up to 230 volts, making it ideal for robust power switching and amplification tasks requiring high reliability.
Housed in a 3-pin TO-3PL package with through-hole mount type, it is compatible with standard PCB designs requiring durable physical mounting and heat dissipation. Its PNP transistor configuration enables efficient switching in various bipolar transistor circuits.
The device functions effectively across an operating temperature range from 0°C to 150°C, ensuring dependable performance under different environmental conditions. With a minimum DC current gain of 35 and a maximum transition frequency of 30 MHz, it aptly balances gain and switching speed for typical power transistor applications.
Dimensions are precise at 46 mm height, 20.5 mm length, and 5.2 mm width, suitable for compact circuit layouts.
This Toshiba bipolar transistor finds extensive use in industrial electronics, power amplifiers, audio equipment, and other electronic devices requiring high voltage and current capabilities. Its robust construction and specifications support manufacturing, repair, and prototyping tasks in commercial and laboratory environments.
The transistor features a TO-3PL package with 3 pins suitable for through-hole mounting. It has a maximum power dissipation rating of 150 watts. Maximum DC collector current of negative 15 amperes supports robust load handling.
Maximum collector emitter voltage is negative 230 volts, ensuring high voltage tolerance. Designed for single transistor configuration with PNP polarity. The device operates reliably between 0°C to 150°C temperature range.
The transistor provides a minimum current gain (hFE) of 35. Maximum transition frequency is 30 MHz suitable for medium frequency applications. Dimensions include a height of 46 mm, length of 20.5 mm, and width of 5.2 mm.
Comes with no specific automotive standards or additional certifications. Explore the full Toshiba transistor range and accessories on EnvMart for your industrial and electronic component needs.
Explore more products in our Power Transistors category.
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