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Toshiba PNP Power Transistor 150W 15A 230V 3-Pin TO-3PL 2SA1943-O(Q)

Category Power Transistors Brand Toshiba Condition New

Specifications

Country of Origin India
Brand Toshiba
Height 46mm
Length 20.5mm
Model 2SA1943-O(Q)
Width 5.2mm
Mount Type Through Hole
Series 2SA1943
Maximum Operating Temperature 150°C
Package Type TO-3PL
Minimum Operating Temperature 0°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -230V
Minimum DC Current Gain hFE 35
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -230V
Maximum Power Dissipation Pd 150W
Maximum DC Collector Current Idc -15A
Transistor Configuration Single
Maximum Transition Frequency ft 30MHz

Key Features

  • The transistor features a TO-3PL package with 3 pins suitable for through-hole mounting.
  • It has a maximum power dissipation rating of 150 watts.
  • Maximum DC collector current of negative 15 amperes supports robust load handling.
  • Maximum collector emitter voltage is negative 230 volts, ensuring high voltage tolerance.
  • Designed for single transistor configuration with PNP polarity.
  • The device operates reliably between 0°C to 150°C temperature range.
  • The transistor provides a minimum current gain (hFE) of 35.
  • Maximum transition frequency is 30 MHz suitable for medium frequency applications.

Product Description

Toshiba 2SA1943-O(Q) PNP Power Transistor is designed for high power applications with a maximum power dissipation of 150 watts, suitable for industrial and commercial electronics projects. This transistor supports up to 15 amperes of collector current and can handle collector emitter voltage up to 230 volts, making it ideal for robust power switching and amplification tasks requiring high reliability.

Housed in a 3-pin TO-3PL package with through-hole mount type, it is compatible with standard PCB designs requiring durable physical mounting and heat dissipation. Its PNP transistor configuration enables efficient switching in various bipolar transistor circuits.

The device functions effectively across an operating temperature range from 0°C to 150°C, ensuring dependable performance under different environmental conditions. With a minimum DC current gain of 35 and a maximum transition frequency of 30 MHz, it aptly balances gain and switching speed for typical power transistor applications.

Dimensions are precise at 46 mm height, 20.5 mm length, and 5.2 mm width, suitable for compact circuit layouts.

This Toshiba bipolar transistor finds extensive use in industrial electronics, power amplifiers, audio equipment, and other electronic devices requiring high voltage and current capabilities. Its robust construction and specifications support manufacturing, repair, and prototyping tasks in commercial and laboratory environments.

The transistor features a TO-3PL package with 3 pins suitable for through-hole mounting. It has a maximum power dissipation rating of 150 watts. Maximum DC collector current of negative 15 amperes supports robust load handling.

Maximum collector emitter voltage is negative 230 volts, ensuring high voltage tolerance. Designed for single transistor configuration with PNP polarity. The device operates reliably between 0°C to 150°C temperature range.

The transistor provides a minimum current gain (hFE) of 35. Maximum transition frequency is 30 MHz suitable for medium frequency applications. Dimensions include a height of 46 mm, length of 20.5 mm, and width of 5.2 mm.

Comes with no specific automotive standards or additional certifications. Explore the full Toshiba transistor range and accessories on EnvMart for your industrial and electronic component needs.

Explore more products in our Power Transistors category.

Toshiba PNP Power Transistor 150W 15A 230V 3-Pin TO-3PL 2SA1943-O(Q)
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Frequently Asked Questions

The maximum power dissipation for this model is 150 watts.

It can handle a maximum DC collector current of negative 15 amperes.

The maximum collector-emitter voltage rating is negative 230 volts.

This transistor operates reliably between 0°C to 150°C.

The minimum DC current gain (hFE) is 35.

The maximum transition frequency is 30 MHz.

It is housed in a TO-3PL package with 3 pins suitable for through-hole mounting.

The dimensions are 46 mm in height, 20.5 mm in length, and 5.2 mm in width.

This model is designed for a single transistor configuration with PNP polarity.

There are no specific automotive standards or additional certifications mentioned for this transistor.

This transistor is suitable for industrial electronics, power amplifiers, and audio equipment requiring high voltage and current capabilities.

The country of origin for this product is India.

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