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Taiwan Semiconductor General Purpose PNP Transistor BC807-25 RF, -500 mA, -45 V, 3-Pin SOT-23

Category Transistor Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin India
Brand Taiwan Semiconductor
Height 1.12mm
Length 3.04mm
Model BC807-25 RF
Width 2.64mm
Mount Type Surface
Series BC807
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 160
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -500mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Compact SOT-23 surface mount package suitable for various PCB designs.
  • Supports maximum DC collector current of -500 mA for general purpose applications.
  • Collector-emitter voltage of up to -45 V for moderate power circuits.
  • Maximum power dissipation of 300 mW ensuring efficient operation.
  • High current gain (hFE) minimum of 160 for reliable amplification performance.
  • Operating temperature range from -55°C to 150°C suitable for harsh environments.
  • Maximum transition frequency of 100 MHz enabling switching in high frequency circuits.
  • Designed as a single PNP transistor, ideal for amplification and switching in electronic circuits.

Product Description

Taiwan Semiconductor BC807-25 RF is a general purpose PNP transistor designed for use in various electronic and industrial applications. It is housed in a compact 3-pin SOT-23 surface mount package that supports efficient PCB mounting and space-saving designs.

This transistor can handle a maximum DC collector current of -500 mA and offers a collector-emitter voltage (Vceo) of -45 V, making it suitable for moderate power amplification and switching tasks. It provides a maximum power dissipation of 300 mW to ensure stable operation under load.

The device features a minimum DC current gain (hFE) of 160, which is beneficial for amplification purposes. It also supports a maximum transition frequency of 100 MHz, allowing use in moderately high-frequency switching circuits.

Its operational temperature range spans from -55°C to 150°C, making it versatile for use in various industrial environments, including electronics manufacturing, instrumentation, and embedded systems.

The BC807-25 RF transistor's configuration is a single PNP type with 3 pins, ideal for designing amplifiers, signal processing circuits, and other electronic modules requiring reliable bipolar transistor performance.

Compact SOT-23 package for efficient surface mounting. Maximum collector current of -500 mA for versatile applications. Collector-emitter voltage rating of -45 V supports moderate power circuitry. Maximum power dissipation rated at 300 mW enhances durability.

High minimum current gain (hFE) of 160 for effective amplification. Wide temperature range from -55°C to 150°C suitable for industrial use. High transition frequency of 100 MHz enables use in switching circuits. Single PNP transistor design with 3 pins in SOT-23 footprint.

This transistor is commonly employed in industrial, laboratory, and commercial electronic applications where small signal bipolar transistors with moderate voltage and current ratings are required. Its surface mount design ensures optimal integration in compact and automated PCB assembly processes.

Explore more Transistor and semiconductor components at EnvMart for high-quality and reliable electronic parts suitable for power management, signal amplification, and switching functions.

Taiwan Semiconductor General Purpose PNP Transistor BC807-25 RF, -500 mA, -45 V, 3-Pin SOT-23
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Frequently Asked Questions

The maximum DC collector current for this transistor is -500 mA, making it suitable for various general-purpose applications.

The collector-emitter voltage (Vceo) rating is -45 V, which supports its use in moderate power circuits.

The maximum power dissipation for the BC807-25 RF is rated at 300 mW, ensuring stable operation under load conditions.

This transistor has a minimum DC current gain (hFE) of 160, which is beneficial for amplification purposes in electronic circuits.

The operating temperature range for this model spans from -55°C to 150°C, making it suitable for harsh environments.

The maximum transition frequency for this transistor is 100 MHz, allowing it to be used in moderately high-frequency switching applications.

It comes in a compact 3-pin SOT-23 surface mount package, which is suitable for various PCB designs.

The BC807-25 RF has a pin count of 3, which is typical for its SOT-23 package design.

The maximum emitter-base voltage (VEBO) for the BC807-25 RF is -5 V, which is important for its operation in circuits.

This model is designed as a single PNP transistor, making it ideal for amplification and switching applications.

The dimensions of this transistor are 3.04 mm in length, 2.64 mm in width, and 1.12 mm in height.

The BC807-25 RF is commonly employed in industrial, laboratory, and commercial electronic applications where small signal amplification and switching are required.

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