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Nexperia Digital Transistor Dual Resistor Bias, 100 mA NPN + PNP, 50 V, 6-Pin UMT PUMD48,115

Category Digital Transistor Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1mm
Length 2.2mm
Model PUMD48,115
Width 1.35mm
Mount Type Surface
Series PUMD48
Maximum Operating Temperature 150°C
Package Type UMT
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 6
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 80
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 180MHz

Key Features

  • The transistor has a 6-pin UMT surface mount package optimized for compact PCB applications.
  • It features integrated bias resistors allowing direct digital drive without external components.
  • The device supports a maximum power dissipation of 200 mW, suitable for low power switching.
  • Operating temperature range spans from -65°C to 150°C, ensuring reliability in harsh environments.
  • Maximum transition frequency is 180 MHz, suitable for high-speed switching circuits.
  • The minimum DC current gain (hFE) is 80, providing stable amplification characteristics.
  • Pin dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height support miniaturized electronics.
  • The transistor polarity combines both NPN and PNP types in an isolated configuration for versatile circuit design.

Product Description

The Nexperia PUMD48,115 digital transistor integrates dual bias resistors with NPN and PNP configurations within a compact 6-pin UMT package. Designed for low power signal switching, it supports a maximum DC collector current of 100 mA and collector emitter voltage of 50 V, ideal for interfacing with digital control signals directly.

This device is surface mount type with an isolated transistor configuration, facilitating easy PCB assembly while minimizing external components due to its internal bias resistor design. Its 200 mW maximum power dissipation supports moderate switching applications in industrial and consumer electronics.

With a high minimum DC current gain of 80 and a maximum transition frequency of 180 MHz, the PUMD48,115 ensures fast response and reliable performance in digital circuits. It operates over a broad temperature range from -65°C to 150°C, suitable for demanding ambient environments including automotive and industrial installations.

Physical dimensions are compact at 2.2 mm length, 1.35 mm width, and 1 mm height, optimized for space-constrained applications on printed circuit boards. The transistor configuration is isolated NPN + PNP with integrated bias resistors.

Designed for use in industrial, communication, and computing electronic circuits requiring direct digital transistor drive. Its surface mount 6-pin UMT package enables automation-friendly assembly processes. The device is suitable for switching loads up to 100 mA at voltages reaching 50 V.

Applications include signal amplification, switching, and interfacing digital logic outputs to various load types. Explore EnvMart's comprehensive range of semiconductor devices, including bipolar and Digital Transistors, for diverse industrial and electronic design requirements.

Nexperia Digital Transistor Dual Resistor Bias, 100 mA NPN + PNP, 50 V, 6-Pin UMT PUMD48,115
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA, making it suitable for low power switching applications.

It operates over a temperature range from -65°C to 150°C, allowing it to function reliably in harsh environments.

The dimensions of the package are 2.2 mm in length, 1.35 mm in width, and 1 mm in height, optimized for compact PCB applications.

The maximum power dissipation for this transistor is 200 mW, suitable for moderate switching applications.

The minimum DC current gain (hFE) is 80, providing stable amplification characteristics for digital circuits.

The maximum transition frequency is 180 MHz, making it suitable for high-speed switching circuits.

It features an isolated configuration combining both NPN and PNP types, allowing for versatile circuit design.

The maximum collector-emitter voltage (Vceo) supported is 50 V, suitable for interfacing with digital control signals.

This model is a surface mount type, facilitating easy PCB assembly and minimizing the need for external components.

The device is RoHS compliant, ensuring it meets environmental standards for hazardous substances.

It is designed for use in industrial, communication, and computing electronic circuits requiring direct digital transistor drive.

The maximum emitter-base voltage (VEBO) for this model is 10 V, which is critical for ensuring safe operation in circuits.

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