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| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 21.46mm |
| Length | 16.26mm |
| Model | IXFH170N10P |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HiperFET, Polar |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 170A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 714W |
| Typical Gate Charge Qg @ Vgs | 198nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
IXYS IXFH170N10P is a high performance Polar N-Channel Power MOSFET designed for industrial and power electronics applications. It supports a maximum continuous drain current of 170 A at a maximum drain-source voltage of 100 V, delivering high efficiency switching and low conduction losses. The enhancement mode transistor comes in a 3-pin TO-247 package optimized for through-hole mounting, making it suitable for robust assembly in power supply and motor control systems.
This device features a low on-resistance of 9 milliohms, minimizing power dissipation during high current operation. It can dissipate up to 714 W of power and operates reliably across a broad temperature range from -55°C to 175°C, ensuring durability in demanding industrial environments.
The IXFH170N10P MOSFET includes a fast intrinsic diode for reverse conduction and a typical gate charge of 198 nC, facilitating rapid switching and gate control. The maximum gate-source voltage rating is dual polarity, at -20 V to +20 V, providing flexibility in drive circuits.
Physical dimensions of the package are 21.46 mm (height) by 16.26 mm (length) and 5.3 mm (width), designed to fit standard power modules and heatsink assemblies. High continuous drain current rating of 170 A ensures suitability for heavy power loads.
Low drain-source resistance contributes to energy efficiency and heat reduction. Wide operating temperature range from -55°C to 175°C accommodates harsh environments. 3-pin TO-247 package enables easy integration into existing power systems.
Fast intrinsic diode improves switching performance in power electronics. Maximum power dissipation of 714 W allows high power applications. Gate voltage tolerance of ±20 V supports versatile drive configurations. Compact physical dimensions compatible with standard industrial designs.
This IXYS HiperFET Polar series Power MOSFET is ideal for use in industrial power supplies, motor controllers, automotive electronics, and other heavy-duty applications requiring efficient and reliable switching capabilities. It delivers robust performance and thermal management in demanding engineering contexts.
Explore more high-quality semiconductor components in the Electronics & Electricals category at EnvMart for your power and control system needs.
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