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IXYS HiperFET Polar N-Channel MOSFET 170 A 100 V Enhancement Mode 3-Pin TO-247 IXFH170N10P

Category Power MOSFET Brand IXYS Condition New

Specifications

Country of Origin India
Brand IXYS
Height 21.46mm
Length 16.26mm
Model IXFH170N10P
Width 5.3mm
Mount Type Through Hole
Series HiperFET, Polar
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 170A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 9mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 714W
Typical Gate Charge Qg @ Vgs 198nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.5V

Key Features

  • Designed in a 3-pin TO-247 package suitable for through-hole mounting.
  • Features a low maximum drain source resistance of 9 milliohms.
  • Enhancement-mode N-channel MOSFET providing reliable switching performance.
  • Capable of dissipating up to 714 W power under typical operating conditions.
  • Operates between -55°C minimum to 175°C maximum temperature range.
  • Maximum gate source voltage rating of -20 V to +20 V ensures robust drive tolerance.
  • Typical gate charge of 198 nanoCoulombs enabling efficient gate drive.

Product Description

IXYS IXFH170N10P is a high performance Polar N-Channel Power MOSFET designed for industrial and power electronics applications. It supports a maximum continuous drain current of 170 A at a maximum drain-source voltage of 100 V, delivering high efficiency switching and low conduction losses. The enhancement mode transistor comes in a 3-pin TO-247 package optimized for through-hole mounting, making it suitable for robust assembly in power supply and motor control systems.

This device features a low on-resistance of 9 milliohms, minimizing power dissipation during high current operation. It can dissipate up to 714 W of power and operates reliably across a broad temperature range from -55°C to 175°C, ensuring durability in demanding industrial environments.

The IXFH170N10P MOSFET includes a fast intrinsic diode for reverse conduction and a typical gate charge of 198 nC, facilitating rapid switching and gate control. The maximum gate-source voltage rating is dual polarity, at -20 V to +20 V, providing flexibility in drive circuits.

Physical dimensions of the package are 21.46 mm (height) by 16.26 mm (length) and 5.3 mm (width), designed to fit standard power modules and heatsink assemblies. High continuous drain current rating of 170 A ensures suitability for heavy power loads.

Low drain-source resistance contributes to energy efficiency and heat reduction. Wide operating temperature range from -55°C to 175°C accommodates harsh environments. 3-pin TO-247 package enables easy integration into existing power systems.

Fast intrinsic diode improves switching performance in power electronics. Maximum power dissipation of 714 W allows high power applications. Gate voltage tolerance of ±20 V supports versatile drive configurations. Compact physical dimensions compatible with standard industrial designs.

This IXYS HiperFET Polar series Power MOSFET is ideal for use in industrial power supplies, motor controllers, automotive electronics, and other heavy-duty applications requiring efficient and reliable switching capabilities. It delivers robust performance and thermal management in demanding engineering contexts.

Explore more high-quality semiconductor components in the Electronics & Electricals category at EnvMart for your power and control system needs.

IXYS HiperFET Polar N-Channel MOSFET 170 A 100 V Enhancement Mode 3-Pin TO-247 IXFH170N10P
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Frequently Asked Questions

The maximum continuous drain current for this model is 170 A.

The maximum drain-source voltage rating is 100 V.

The typical gate charge is 198 nanoCoulombs (nC).

It can dissipate up to 714 W of power under typical operating conditions.

The maximum drain-source resistance is 9 milliohms (mΩ).

The dimensions are 21.46 mm in height, 16.26 mm in length, and 5.3 mm in width.

The operating temperature range is from -55°C to 175°C.

It is designed for through-hole mounting.

The maximum gate-source voltage rating is -20 V to +20 V.

This model is suitable for industrial power supplies, motor controllers, and automotive electronics.

It includes a fast intrinsic diode for reverse conduction.

It belongs to the HiperFET Polar series.

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