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DiodesZetex N-Channel MOSFET, 1.4 A, 30 V, Enhancement Mode, 3-Pin SOT-23 ZXM61N03FTA

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DiodesZetex N-Channel MOSFET, 1.4 A, 30 V, Enhancement Mode, 3-Pin SOT-23 ZXM61N03FTA

Name: DiodesZetex N-Channel MOSFET, 1.4 A, 30 V, Enhancement Mode, 3-Pin SOT-23 ZXM61N03FTA
Brand: DiodesZetex
SKU: 112065
Price: 0.24 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1mm
Length	3.05mm
Model	ZXM61N03FTA
Width	1.4mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type N
Maximum Continuous Drain Current Id	1.4A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	300mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	806mW
Typical Gate Charge Qg @ Vgs	4.1nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	0.95V

Key Features

Operates with an enhancement mode channel type for reliable switching.
Maximum continuous drain current of 1.4 A supports moderate power applications.
Maximum drain-source voltage rating of 30 V ensures device durability.
Low maximum drain-source resistance of 300 mΩ reduces power loss.
Compact SOT-23 surface mount package with 3 pins enables space-saving PCB design.
Typical gate charge of 4.1 nC at Vgs facilitates efficient gate control.
Designed to operate within a wide temperature range from -55°C to 150°C.
Complies with automotive standard AEC-Q101 ensuring quality for vehicle electronics.

Product Description

DiodesZetex ZXM61N03FTA is a high-quality N-Channel MOSFET designed for discrete semiconductor applications requiring reliable switching performance. It features a maximum continuous drain current of 1.4 A and a drain-source voltage rating of 30 V suitable for moderate power electronic circuits.

This enhancement mode MOSFET comes in a compact 3-pin SOT-23 surface mount package ideal for space-constrained PCBs. It offers a low drain-source resistance of 300 mΩ which helps to minimize conduction losses and improve circuit efficiency.

The device's typical gate charge of 4.1 nC at gate-source voltage makes it easy to drive with low gate power requirements. It operates reliably across a broad temperature range from -55°C to 150°C, making it suitable for harsh environments including automotive applications where it meets AEC-Q101 standards.

With a forward voltage of 0.95 V, the ZXM61N03FTA ensures efficient conduction and minimal power dissipation. Its precise dimensions of 1 mm height, 3.05 mm length, and 1.4 mm width facilitate integration into compact electronic devices.

Enhancement mode N-Channel MOSFET ensures effective switching. Maximum continuous drain current of 1.4 A for moderate load handling. 30 V drain-source voltage rating for standard power circuits. Low drain-source resistance reduces energy loss and heat build-up.

Compact 3-pin SOT-23 package allows high-density mounting. Typical gate charge of 4.1 nC allows efficient gate drive. Wide operating temperature from -55°C up to 150°C enhances reliability. Compliant with automotive AEC-Q101 standard for robust applications.

Forward voltage of 0.95 V minimizes conduction drop. Small physical footprint with height 1 mm, length 3.05 mm, width 1.4 mm.

This MOSFET is suitable for various industrial, automotive, consumer electronics, and power management applications demanding a compact and efficient switching transistor. Explore more components like this in the Electronics & Electricals category at EnvMart.