DiodesZetex PNP Transistor 4-Pin SOT-223, Maximum DC Collector Current -3 A, Maximum Collector Emitter Voltage -25 FZT749TA

DiodesZetex FZT749TA is a new, general purpose PNP bipolar transistor supplied in a 4-pin SOT-223 surface mount package. It supports a maximum DC collector current of -3 amperes and a collector emitter voltage of -25 volts, making it suitable for medium power switching and amplification tasks in electronic circuits.

This transistor possesses a maximum power dissipation rating of 2 watts, allowing it to sustain operations at moderately high power levels without overheating. Its high maximum transition frequency of 160 MHz ensures suitability for high-frequency applications such as RF amplifiers and switching circuits.

The device operates reliably in a wide temperature range from -55°C to 150°C, ensuring robust performance even under harsh industrial or automotive conditions. It meets automotive standards including AEC-Q100, AEC-Q101, and AEC-Q200, indicating compliance with stringent reliability criteria.

The 4-pin SOT-223 package supports surface mounting on printed circuit boards, facilitating compact and cost-effective assembly in industrial and consumer electronics. The transistor configuration is single PNP type with a minimum DC current gain of 15, providing an efficient current amplification factor suitable for drive and switching circuits.

Physical dimensions of the transistor are compact, with length 6.7 mm, width 3.7 mm, and height 1.7 mm, enabling integration into space-constrained PCB layouts for various electronics manufacturing applications.

The transistor configuration is single PNP type suitable for general purpose applications. Maximum power dissipation is 2 watts ensuring reliable operation under high load. Pin count is 4 with SOT-223 package for efficient PCB assembly.

Operating temperature range from -55°C up to 150°C allows usage in diverse environments. Maximum transition frequency is rated at 160 MHz for high-speed switching applications. Minimum DC current gain (hFE) is 15, providing sufficient amplification.

Additional voltage limits include 35 V maximum collector base voltage and 5 V maximum emitter base voltage. Compact dimensions: length 6.7 mm, width 3.7 mm, height 1.7 mm facilitate space-saving designs.

This transistor is widely used in industrial electronics, automotive electronics, telecommunications, and power amplification. Its adherence to automotive standards makes it highly suitable for demanding environments requiring high reliability and durability.

For purchasing and integration, this transistor is commonly applied in switching regulators, motor drivers, and signal amplification circuits for various control and monitoring systems.

Explore the full range of semiconductor and transistor products for advanced industrial engineering and manufacturing solutions on EnvMart.

Explore more products in our Bipolar Transistors category.