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DiodesZetex N-Channel MOSFET 4 A 30 V Enhancement Mode 3-Pin SOT-23 DMG3418L

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1mm
Length 3mm
Model DMG3418L
Width 1.4mm
Mount Type Surface
Series DMG3418L
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type N
Maximum Continuous Drain Current Id 4A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 150mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.4W
Typical Gate Charge Qg @ Vgs 5.5nC
Maximum Gate Source Voltage Vgs 12V
Forward Voltage Vf 0.8V

Key Features

  • Maximum continuous drain current of 4 A ensures robust performance.
  • Low maximum drain-source resistance of 150 milliohms reduces power losses.
  • Maximum drain-source voltage rating of 30 V for medium voltage applications.
  • Compact surface mount SOT-23 package with 3 pins enables easy PCB integration.
  • Maximum power dissipation of 1.4 W supports efficient thermal management.
  • Operational temperature ranges from -55 °C to 150 °C for reliability in harsh environments.
  • Channel mode is enhancement type suitable for switching applications.
  • Typical gate charge of 5.5 nC at specified gate voltage enhances switching speed.

Product Description

DiodesZetex DMG3418L N-Channel MOSFET is designed for a wide range of electronic and industrial applications requiring efficient switching and amplification.

This MOSFET supports a maximum continuous drain current of 4 A and a drain-source voltage of 30 V, operating in enhancement mode with low on-resistance, making it ideal for power management circuits, automotive electronics, and consumer devices.

The device is housed in a compact 3-pin SOT-23 surface-mount package measuring 3 mm length, 1.4 mm width, and 1 mm height. It offers a maximum power dissipation of 1.4 W and operates reliably across a broad temperature range from -55 °C to 150 °C, ensuring durability under demanding environmental conditions.

Featuring a low gate charge of 5.5 nC and a maximum gate-source voltage of 12 V, it enables fast switching and robust gate control. Typical forward voltage is 0.8 V, contributing to reduced conduction losses.

The DMG3418L series complies with the automotive AEC-Q101 standard, confirming suitability for automotive and industrial systems with high reliability requirements.

Common use cases include industrial power supplies, motor controls, and signal amplification in commercial and automotive electronics. Its surface mount package facilitates easy integration into modern printed circuit boards for efficient manufacturing processes.

Maximum continuous drain current of 4 A ensures robust performance. Low maximum drain-source resistance of 150 milliohms reduces power losses. Maximum drain-source voltage rating of 30 V for medium voltage applications. Compact surface mount SOT-23 package with 3 pins enables easy PCB integration.

Maximum power dissipation of 1.4 W supports efficient thermal management. Operational temperature ranges from -55 °C to 150 °C for reliability in harsh environments. Channel mode is enhancement type suitable for switching applications.

Typical gate charge of 5.5 nC at specified gate voltage enhances switching speed. Forward voltage of 0.8 V minimizes conduction losses. Complies with automotive standard AEC-Q101, suitable for automotive electronics. For further products in semiconductors and MOSFETs, explore EnvMart's extensive catalog to find components tailored to your industrial and electronic design needs.

DiodesZetex N-Channel MOSFET 4 A 30 V Enhancement Mode 3-Pin SOT-23 DMG3418L
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Frequently Asked Questions

The maximum continuous drain current for this model is 4 A.

It has a maximum drain-source voltage rating of 30 V, suitable for medium voltage applications.

This MOSFET is housed in a compact SOT-23 package, measuring 3 mm in length, 1.4 mm in width, and 1 mm in height.

The maximum power dissipation is 1.4 W, supporting efficient thermal management.

It operates reliably within a temperature range of -55 °C to 150 °C.

This model features an enhancement type channel suitable for switching applications.

The typical gate charge at the specified gate voltage is 5.5 nC, which enhances switching speed.

The maximum gate-source voltage is 12 V.

The forward voltage is 0.8 V, which helps to minimize conduction losses.

Yes, it complies with the automotive standard AEC-Q101, confirming its suitability for automotive applications.

This MOSFET has a total of 3 pins, facilitating its surface mount integration.

The maximum drain-source resistance is 150 milliohms, which reduces power losses.

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