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Infineon HEXFET N-Channel MOSFET 71A 60V Enhancement 3-Pin TO-252 IRFR7546TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | IRFR7546TRPBF |
| Width | 2.39mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 71A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 7.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 99W |
| Typical Gate Charge Qg @ Vgs | 58nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Type N-channel enhancement mode MOSFET suited for efficient switching.
- Maximum continuous drain current of 71A ensures high-current handling.
- Rated for a maximum drain-source voltage of 60V.
- Low on-resistance of 7.9mΩ resulting in high efficiency.
- Surface mount TO-252 (DPAK) package with 3 pins.
- Supports maximum power dissipation of 99W for demanding thermal scenarios.
- Operates within a wide temperature range from -55°C to +175°C.
- Gate-to-source voltage tolerance up to ±20V.
Product Description
Infineon IRFR7546TRPBF HEXFET N-Channel MOSFET is designed to provide high efficiency and robust performance for power management, switching, and conversion applications. Combining a high continuous drain current of 71A and a drain-source voltage of 60V, it offers reliable operation in demanding scenarios such as industrial automation, motor drives, and power conversion systems.
The MOSFET features an enhancement mode N-channel operation with low on-resistance (7.9mΩ), ensuring optimal efficiency in power delivery and minimizing losses. Its surface-mount TO-252 package facilitates easy PCB integration and space-saving, making it suitable for compact designs. With three pins, the device ensures straightforward connections for circuit integration.
Type N-channel enhancement mode MOSFET suited for efficient switching. Maximum continuous drain current of 71A ensures high-current handling. Rated for a maximum drain-source voltage of 60V. Low on-resistance of 7.9mΩ resulting in high efficiency.
Surface mount TO-252 (DPAK) package with 3 pins. Supports maximum power dissipation of 99W for demanding thermal scenarios. Operates within a wide temperature range from -55°C to +175°C. Gate-to-source voltage tolerance up to ±20V.
Suitable for battery-powered designs, DC/DC, AC/DC converters, and motor drives. Rugged avalanche and dynamic dV/dt protection enhances reliability.
Applications include brushed motor drive, battery-powered circuits, half-bridge/full-bridge topologies, synchronous rectification, and both DC/DC and AC/DC conversion systems. Designed with advanced avalanche and dV/dt protection, it offers increased ruggedness and reliability during operation, making it highly recommended for environments requiring durable and efficient switching components.
The device covers automotive, industrial, laboratory, and commercial electronics. It meets modern requirements for temperature tolerance and power dissipation, ensuring stable long-term functionality. Its compatibility with a variety of topologies makes it a versatile choice for power management projects.
Browse more Infineon MOSFETs and semiconductors at EnvMart for advanced switching and power management needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 71A, allowing it to handle high-current applications effectively.
This MOSFET is rated for a maximum drain-source voltage of 60V, suitable for various power management applications.
It features a low on-resistance of 7.9mΩ, which contributes to its high efficiency in power delivery.
The device comes in a surface mount TO-252 package with 3 pins, facilitating easy PCB integration.
This MOSFET operates within a wide temperature range from -55°C to +175°C, making it suitable for demanding environments.
The maximum power dissipation supported by this MOSFET is 99W, allowing it to perform well under thermal stress.
It is suitable for applications such as brushed motor drives, battery-powered circuits, and both DC/DC and AC/DC conversion systems.
The gate-to-source voltage tolerance for this model is up to ±20V, providing flexibility in circuit design.
The dimensions of this model are 6.22mm in height, 6.73mm in length, and 2.39mm in width.
This device uses a type N-channel enhancement mode, which is suited for efficient switching applications.
The typical gate charge at Vgs for this MOSFET is 58nC, which is relevant for switching performance.
This model belongs to the HEXFET series, known for high efficiency and robust performance in power management applications.
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