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Vishay N-Channel MOSFET 2.7 A 150 V Enhancement Mode 8-Pin SOIC SI4848DY-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.55mm |
| Length | 5mm |
| Model | SI4848DY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | Si4848DY |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.7A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET features an enhancement mode channel allowing precise control of current.
- Has a maximum power dissipation rating of 3 W, suitable for moderate power circuits.
- Includes a typical gate charge (Qg) of 17 nC at a gate-source voltage of 20 V, enabling efficient switching.
- The device operates reliably across a wide temperature range from -55°C to 150°C.
- Offers a low maximum drain-source resistance (Rds) of 95 milliohms for reduced conduction losses.
- Compact SOIC package dimensions (5 mm length, 4 mm width, 1.55 mm height) facilitate PCB space optimization.
- Halogen-free TrenchFET® technology ensures environmentally friendly design and performance.
- Designed for surface-mount PCB assembly, enhancing manufacturing efficiency.
Product Description
Vishay SI4848DY-T1-GE3 is an N-Channel MOSFET designed for efficient switching and power handling in electronic circuits. This device supports a maximum continuous drain current of 2.7 A and can handle voltages up to 150 V, making it suitable for power management and amplification in industrial, consumer electronics, and automotive applications.
The 8-pin SOIC surface-mount package provides compactness with dimensions of 5 mm length, 4 mm width, and 1.55 mm height, making it ideal for high-density PCB layouts. Its enhancement mode channel type allows improved switching control and reliability.
This MOSFET features a maximum power dissipation rating of 3 W, with a low typical gate charge of 17 nC at 20 V gate-source voltage, enabling fast and efficient switching performance. The device's maximum drain-source resistance (Rds) of 95 milliohms reduces power losses, improving thermal performance and overall efficiency.
Operating temperature range from -55°C to 150°C allows use in a broad range of environments. The component is RoHS-compliant, halogen-free, and built using Vishay's TrenchFET® technology ensuring enhanced performance and environmental safety.
Typical applications include power supply circuits, motor controls, and general-purpose switching in industrial and commercial electronic devices. This MOSFET is suitable for assembly on surface mount technology (SMT) production lines, promoting ease of integration into existing systems.
This MOSFET features an enhancement mode channel allowing precise control of current. Has a maximum power dissipation rating of 3 W, suitable for moderate power circuits. Includes a typical gate charge (Qg) of 17 nC at a gate-source voltage of 20 V, enabling efficient switching.
The device operates reliably across a wide temperature range from -55°C to 150°C. Offers a low maximum drain-source resistance (Rds) of 95 milliohms for reduced conduction losses. Compact SOIC package dimensions (5 mm length, 4 mm width, 1.55 mm height) facilitate PCB space optimization.
Halogen-free TrenchFET® technology ensures environmentally friendly design and performance. Designed for surface-mount PCB assembly, enhancing manufacturing efficiency. Explore Vishay MOSFETs and similar semiconductor devices on EnvMart for industrial, laboratory, and commercial electronics needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.7 A.
It can handle a maximum drain-source voltage of 150 V.
The typical gate charge (Qg) at a gate-source voltage of 20 V is 17 nC.
The maximum power dissipation rating is 3 W.
The SOIC package dimensions are 5 mm in length, 4 mm in width, and 1.55 mm in height.
It operates reliably across a temperature range from -55°C to 150°C.
The maximum drain-source resistance (Rds) is 95 milliohms.
This model features an enhancement mode N-channel.
Yes, it is designed for surface-mount PCB assembly, enhancing manufacturing efficiency.
The maximum gate-source voltage (Vgs) is 20 V.
It is suitable for power supply circuits, motor controls, and general-purpose switching in industrial and commercial electronic devices.
It utilizes halogen-free TrenchFET® technology, ensuring environmentally friendly design and performance.
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