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Infineon HEXFET N-Channel MOSFET 6A 500V TO-252 IRFR825TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.65mm |
| Length | 10.67mm |
| Model | IRFR825TRPBF |
| Width | 4.83mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 1.3Ω |
| Maximum Power Dissipation Pd | 119W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- N-channel MOSFET from the HEXFET series.
- Maximum continuous drain current of 6A for stable operation.
- Maximum drain-source voltage of 500V for robust high-voltage control.
- Low drain-source resistance of 1.3Ω for efficient power management.
- Surface-mount TO-252 package with 3 pins simplifies PCB design.
- Gate-source voltage up to 20V improves noise immunity.
- High power dissipation rated up to 119W.
- Wide operating temperature range from -55°C to +175°C.
Product Description
Infineon IRFR825TRPBF N-Channel MOSFET from the HEXFET series is engineered for high reliability and performance in demanding applications. This device supports a continuous drain current of 6A and a maximum drain-source voltage of 500V, making it suitable for use in circuits requiring substantial power management and rugged switching capability.
The surface-mount TO-252 (DPAK) package offers compact installation and is ideal for automated PCB assembly processes. Its 3-pin configuration facilitates straightforward integration for designers working on UPS systems, SMPS circuits, and other power conversion projects.
Performance highlights include a low drain-source resistance of 1.3Ω, enabling efficient operation, and a maximum gate-source voltage of 20V, promoting improved noise immunity and robust drive requirements. The device features a wide operating temperature range, ensuring stability from -55°C to +175°C, accommodating both industrial and commercial environments.
With a forward voltage rated at 1.2V and a maximum power dissipation of 119W, this MOSFET is tailored for applications such as energy conversion, control systems, and embedded electronics. Typical gate charge at Vgs is 34nC, optimizing switching speed for fast response circuits.
N-channel HEXFET MOSFET for reliable, efficient switching. 6A continuous drain current with 500V drain-source voltage. Low Rds(on) value and high power dissipation capability. Surface-mount TO-252 package suited for compact designs.
Wide temperature tolerance and strong noise immunity. Applicable in UPS, SMPS, industrial controls, and power management electronics.
This Infineon MOSFET offers dependable performance for engineers and designers building robust electronic systems. Its high voltage and current ratings, combined with a sturdy package and wide operating range, make it an essential component in the semiconductor and power management sector.
Explore more high-performance MOSFETs in the Electronics & Electricals category on EnvMart and discover the trusted quality of Infineon semiconductor solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6A, allowing for stable operation in various applications.
This MOSFET can handle a maximum drain-source voltage of 500V, making it suitable for high-voltage applications.
The drain-source resistance (Rds(on)) of this device is 1.3Ω, which contributes to efficient power management.
It comes in a surface-mount TO-252 package, which simplifies PCB design and is ideal for automated assembly.
The operating temperature range for this model is from -55°C to +175°C, accommodating a variety of environments.
The maximum power dissipation for this MOSFET is rated at 119W, allowing it to handle significant power loads.
The typical gate charge at Vgs is 34nC, optimizing the switching speed for fast response circuits.
This MOSFET supports a maximum gate-source voltage of 20V, enhancing noise immunity and drive capability.
This model features a 3-pin configuration, facilitating straightforward integration into electronic designs.
The forward voltage rating for this MOSFET is 1.2V, which is relevant for its operation in circuits.
This model is suitable for applications such as UPS systems, SMPS circuits, and other power management electronics.
This device is an N-channel MOSFET, which is commonly used for efficient switching in various electronic applications.
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