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Infineon 600V CoolMOS CE N-Channel MOSFET, 6.8A, TO-220 Package, IPA60R1K0CEXKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 16.15mm
Length 29.75mm
Model IPA60R1K0CEXKSA1
Width 4.9mm
Mount Type Through Hole
Series 600V CoolMOS CE
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -40°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 6.8A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 1Ω
Channel Mode N
Maximum Power Dissipation Pd 61W
Typical Gate Charge Qg @ Vgs 13nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 0.9V

Key Features

  • Ideal for power factor correction and hard/soft switching stages in electronic equipment.
  • 600V maximum drain-source voltage enables high-voltage operation.
  • Continuous drain current rated at 6.8A for robust power handling.
  • TO-220 package with through-hole mount for easy integration.
  • Low drain-source resistance of 1Ω improves efficiency and reduces losses.
  • High commutation ruggedness and simple drive requirements.
  • Halogen-free, Pb-free plating for environmentally friendly compliance.
  • Wide temperature range from -40°C up to 150°C for versatile environments.

Product Description

Infineon IPA60R1K0CEXKSA1 is a 600V CoolMOS CE N-Channel MOSFET, engineered to meet demanding requirements in industrial and commercial power electronics. Its superjunction (SJ) technology results in enhanced performance for power conversion and amplification tasks.

This MOSFET features a maximum drain-source voltage of 600V, supporting applications requiring high voltage and reliable switching. With a continuous drain current of 6.8A and a maximum power dissipation of 61W, it is suitable for use in power factor correction, hard-switching PWM stages, and resonant switching circuits in devices such as adapters, LCD TVs, indoor lighting, and PC supplies.

Maximum drain-source voltage: 600V for robust voltage isolation. Maximum continuous drain current: 6.8A. Package type: TO-220, 3-pin configuration. Low Rds(on): 1Ω for reduced power losses. Operating temperature range: -40°C to 150°C.

Gate-source voltage max: 20V, with typical gate charge 13nC. Halogen-free mold compound and Pb-free plating for environmental compliance.

The IPA60R1K0CEXKSA1 device is easy to integrate, thanks to its through-hole mounting and standard TO-220 package size (29.75mm length, 16.15mm height, 4.9mm width). Its high commutation ruggedness makes it reliable for frequent switching operations.

Common industrial applications include power conversion, PFC stages, hard and soft switching PWM, and resonant switching for electronics such as power supplies, TVs, and lighting systems. It is also suited for laboratory setups, manufacturing processes, and other environments requiring robust semiconductor performance.

Explore more products from Infineon and MOSFET categories at EnvMart for your industrial and electronic design needs.

Infineon 600V CoolMOS CE N-Channel MOSFET, 6.8A, TO-220 Package, IPA60R1K0CEXKSA1
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Frequently Asked Questions

The maximum drain-source voltage of the IPA60R1K0CEXKSA1 is 600V, enabling high-voltage operation in various applications.

This model has a continuous drain current rating of 6.8A, suitable for robust power handling in electronic applications.

The IPA60R1K0CEXKSA1 is packaged in a TO-220 type, which features a through-hole mount for easy integration into circuits.

It operates within a temperature range of -40°C to 150°C, making it versatile for various environments.

The maximum gate-source voltage for this MOSFET is 20V, which is important for ensuring proper operation in circuits.

This model features a low drain-source resistance of 1Ω, which improves efficiency and reduces power losses during operation.

The dimensions of this MOSFET are 29.75mm in length, 16.15mm in height, and 4.9mm in width.

It is suitable for applications including power factor correction, hard-switching PWM stages, and resonant switching circuits.

The typical gate charge at Vgs is 13nC, which indicates the amount of charge needed to turn the device on.

The maximum power dissipation for the IPA60R1K0CEXKSA1 is 61W, allowing it to handle significant power levels in applications.

This model features an N-channel type, which is commonly used for various switching applications.

Yes, it features halogen-free mold compound and Pb-free plating, ensuring compliance with environmental standards.

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