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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1mm |
| Length | 2.9mm |
| Model | BFR35APE6327HTSA1 |
| Width | 1.3mm |
| Mount Type | Surface |
| Series | BFR35AP |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 15V |
| Minimum DC Current Gain hFE | 70 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 2.5V |
| Maximum Collector Base Voltage VCBO | 20V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 280mW |
| Maximum DC Collector Current Idc | 45mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 5000MHz |
Infineon BFR35APE6327HTSA1 bipolar transistor is a precise NPN transistor designed for electronic and RF circuit applications. With a maximum DC collector current of 45 mA and collector-emitter voltage rating of 15 V, it provides reliable performance in compact spaces. Housed in a 3-pin SOT-23 surface mount package, it supports modern PCB assembly techniques for high-density designs.
This transistor delivers a minimum DC current gain of 70 and a maximum transition frequency of 5000 MHz, making it ideal for high-frequency amplification tasks in RF modules, communication equipment, and signal processing circuits.
The device supports a maximum collector base voltage of 20 V and emitter base voltage of 2.5 V, alongside a maximum power dissipation rating of 280 mW, ensuring durability and thermal stability up to 150°C operating temperature.
The compact physical dimensions - length 2.9 mm, width 1.3 mm, and height 1 mm - fit into space-constrained designs while meeting automotive-grade reliability standards as per AEC-Q101 requirements.
This transistor is widely applied in industrial, automotive, communication, and consumer electronics for amplification and switching purposes. Its surface mount package supports automated assembly lines enhancing production efficiency and quality.
Engineers and designers benefit from Infineon's robust transistor portfolio including this model for high-performance, small footprint solutions. This transistor offers a maximum collector base voltage of 20 V. It features a maximum power dissipation of 280 mW for reliable performance.
Minimum DC current gain (hFE) of 70 ensures efficient amplification. Maximum transition frequency is 5000 MHz, suitable for RF applications. Designed to operate up to a maximum temperature of 150°C. Compact dimensions: length 2.9 mm, width 1.3 mm, height 1 mm.
Automotive standard compliant with AEC-Q101. Packaged in industry-standard SOT-23 format compatible with surface mount assemblies. Explore more Infineon Bipolar Transistors and electronic components in EnvMart’s Electronics & Electricals section for all your semiconductor needs.
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