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onsemi N-Channel MOSFET 12A 60V TO-252 Surface-Mount Enhancement 3-Pin NTD3055L104T4G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | NTD3055L104T4G |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | NTD3055L104 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 104mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 48W |
| Typical Gate Charge Qg @ Vgs | 7.4nC |
| Maximum Gate Source Voltage Vgs | 15V |
| Forward Voltage Vf | -1.2V |
Key Features
- Provides high-efficiency switching for power and signal applications.
- Supports maximum continuous drain current of 12A and drain-source voltage of 60V.
- TO-252 surface-mount package with 3-pin configuration facilitates compact PCB designs.
- Enhancement channel mode ensures reliable performance in modern electronics.
- Typical gate charge of 7.4nC at 15V gate-source voltage enhances fast switching capability.
- Maximum drain-source resistance of 104mΩ supports low-loss operation.
- Wide operating temperature range from -55°C to +175°C assures suitability for industrial and automotive use.
- Compliance with AEC-Q101 automotive standard enhances reliability in demanding applications.
Product Description
The onsemi NTD3055L104T4G is a high-performance N-channel MOSFET designed to deliver efficient power switching and signal amplification in electronic circuits. Featuring a robust enhancement mode, it supports a maximum continuous drain current of 12A and a drain-source voltage of 60V, making it ideal for applications requiring reliable, high-current operation.
Packaged in a TO-252 surface-mount format with three pins, this MOSFET integrates easily into compact PCB layouts. Its low drain-source resistance of 104mΩ permits low-loss current handling, maximizing operational efficiency and minimizing heat dissipation. The device includes a typical gate charge of 7.4nC at a gate-source voltage of 15V, contributing to fast switching performance required in DC-DC converters, motor drivers, and power management modules.
With an operating temperature range from -55°C up to 175°C, the NTD3055L104T4G is engineered for durability in harsh environments. The MOSFET complies with the AEC-Q101 automotive standard, confirming its suitability for automotive-grade applications subject to rigorous reliability and operational demands.
Other technical highlights include a forward voltage (Vf) of -1.2V, maximum power dissipation of 48W, and a pin count of three. Its surface-mount design streamlines automated production and supports scalable manufacturing operations. Dimensions are precise, with a height of 2.38mm, length of 6.73mm, and width of 6.22mm, enabling integration into space-constrained assemblies.
This device’s enhancement mode channel ensures stable and predictable performance, supporting a wide variety of industrial, automotive, and commercial electronic systems. Common use cases encompass switching regulators, power supplies, load switches, and automotive electronic systems.
The onsemi NTD3055L104T4G N-channel MOSFET combines quality, proven performance, and compact design for versatile implementation in demanding environments. Explore EnvMart for more semiconductor solutions from onsemi and a wide range of discrete MOSFETs for advanced electronics projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12A.
This MOSFET supports a maximum drain-source voltage of 60V.
The typical gate charge at a 15V gate-source voltage is 7.4nC.
The TO-252 package has a height of 2.38mm, length of 6.73mm, and width of 6.22mm.
The maximum drain-source resistance is 104mΩ, which supports low-loss operation.
The operating temperature range for this MOSFET is from -55°C to 175°C.
This model complies with the AEC-Q101 automotive standard, enhancing its reliability for automotive applications.
The maximum power dissipation capability of this MOSFET is 48W.
This MOSFET features a 3-pin configuration.
It uses an enhancement mode N-channel configuration.
The forward voltage (Vf) of this MOSFET is -1.2V.
This model is suitable for applications such as switching regulators, power supplies, load switches, and automotive electronic systems.
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