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IXYS HiperFET Polar Type N-Channel MOSFET, 40A, 600V, SOT-227 Panel Mount, Enhancement Mode IXFN48N60P

Category MOSFET Brand IXYS Condition New

Specifications

Country of Origin Korea
Brand IXYS
Height 9.6mm
Length 38.23mm
Model IXFN48N60P
Width 25.42mm
Mount Type Panel
Series HiperFET, Polar
Maximum Operating Temperature 150°C
Package Type SOT-227
Minimum Operating Temperature -55°C
Pin Count 4
Channel Type Type N
Maximum Continuous Drain Current Id 40A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 140mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 625W
Typical Gate Charge Qg @ Vgs 150nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.5V

Key Features

  • 40A continuous drain current for high-power circuits.
  • 600V maximum drain-source voltage ensures robust insulation and safety for demanding environments.
  • Enhancement mode N-channel MOSFET construction with fast intrinsic diode for efficient switching.
  • SOT-227 package and panel mount design for secure integration in industrial systems.
  • Typical gate charge of 150nC at Vgs, supporting rapid response times.
  • Maximum gate-source voltage of 30V for versatile signal compatibility.
  • Low drain-source resistance of 140 milliohm reduces power loss.
  • Operates within a temperature range from -55°C to 150°C for broad deployment.

Product Description

The IXYS IXFN48N60P MOSFET is a Polar Type N-Channel device from the HiperFET series, engineered for high-current, high-voltage switching applications in industrial and power electronics systems. With a maximum continuous drain current of 40A and a voltage rating of 600V, this enhancement mode MOSFET is capable of handling substantial power under rigorous conditions, making it ideal for applications such as motor drives, inverters, and large power supplies.

Built to provide reliable and efficient performance, the IXFN48N60P features a fast intrinsic diode that enables quick switching action and minimizes losses. The SOT-227 package with a panel-mount configuration supports secure installation and robust thermal management, suitable for both replacement and new builds in industrial environments.

With a typical gate charge of 150nC at Vgs and a maximum gate-source voltage of 30V, the device adapts to varied signal levels while maintaining fast switching capabilities. Its low drain-source resistance of just 140 milliohm ensures high efficiency by reducing voltage drops and limiting heat generation, critical for sustained high-current operation.

The MOSFET's broad operational temperature range from -55°C to 150°C allows it to perform reliably in both extremely cold and hot environments. Power dissipation is supported up to 625W, making this device robust enough for demanding load profiles encountered in power conversion and distribution systems.

Physically, the IXFN48N60P offers a compact footprint at 38.23mm length, 25.42mm width, and 9.6mm height, providing ease of integration in tight panel spaces while delivering industrial-grade performance. The 4-pin SOT-227 design facilitates straightforward wiring for both new assemblies and retrofits.

This product finds utility across a range of applications, including industrial motor drives, switching power supplies, renewable energy inverters, and construction of efficient high-current bus systems. Its panel-mount form factor makes it suitable for commercial setups, laboratory projects, and manufacturing automation tasks.

Explore more advanced power semiconductors and N-channel MOSFET solutions from IXYS and within the MOSFET category to find tailored components for your electronics and electrical projects.

IXYS HiperFET Polar Type N-Channel MOSFET, 40A, 600V, SOT-227 Panel Mount, Enhancement Mode IXFN48N60P
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Frequently Asked Questions

The IXYS IXFN48N60P has a maximum continuous drain current of 40A, making it suitable for high-power applications.

This MOSFET supports a maximum drain-source voltage of 600V, ensuring robust insulation for demanding environments.

The typical gate charge at Vgs for this model is 150nC, which supports rapid response times in switching applications.

The IXFN48N60P features a low drain-source resistance of 140 milliohm, which helps reduce power loss during operation.

It operates within a temperature range from -55°C to 150°C, allowing for deployment in extreme environmental conditions.

This model comes in a SOT-227 package, designed for panel mounting to facilitate secure integration in industrial systems.

The IXFN48N60P can dissipate power up to 625W, making it suitable for demanding load profiles in power conversion applications.

This MOSFET has dimensions of 38.23mm in length, 25.42mm in width, and 9.6mm in height, allowing for compact installations.

The maximum gate-source voltage for the IXFN48N60P is 30V, which allows compatibility with various signal levels.

This MOSFET is suitable for applications such as industrial motor drives, switching power supplies, and renewable energy inverters.

The IXFN48N60P features a 4-pin configuration, facilitating straightforward wiring for both new assemblies and retrofits.

The IXFN48N60P has a Type N enhancement mode channel, providing efficient switching capabilities for high-power applications.

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