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| Country of Origin | Korea |
|---|---|
| Brand | IXYS |
| Height | 9.6mm |
| Length | 38.23mm |
| Model | IXFN48N60P |
| Width | 25.42mm |
| Mount Type | Panel |
| Series | HiperFET, Polar |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-227 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 140mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 625W |
| Typical Gate Charge Qg @ Vgs | 150nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
The IXYS IXFN48N60P MOSFET is a Polar Type N-Channel device from the HiperFET series, engineered for high-current, high-voltage switching applications in industrial and power electronics systems. With a maximum continuous drain current of 40A and a voltage rating of 600V, this enhancement mode MOSFET is capable of handling substantial power under rigorous conditions, making it ideal for applications such as motor drives, inverters, and large power supplies.
Built to provide reliable and efficient performance, the IXFN48N60P features a fast intrinsic diode that enables quick switching action and minimizes losses. The SOT-227 package with a panel-mount configuration supports secure installation and robust thermal management, suitable for both replacement and new builds in industrial environments.
With a typical gate charge of 150nC at Vgs and a maximum gate-source voltage of 30V, the device adapts to varied signal levels while maintaining fast switching capabilities. Its low drain-source resistance of just 140 milliohm ensures high efficiency by reducing voltage drops and limiting heat generation, critical for sustained high-current operation.
The MOSFET's broad operational temperature range from -55°C to 150°C allows it to perform reliably in both extremely cold and hot environments. Power dissipation is supported up to 625W, making this device robust enough for demanding load profiles encountered in power conversion and distribution systems.
Physically, the IXFN48N60P offers a compact footprint at 38.23mm length, 25.42mm width, and 9.6mm height, providing ease of integration in tight panel spaces while delivering industrial-grade performance. The 4-pin SOT-227 design facilitates straightforward wiring for both new assemblies and retrofits.
This product finds utility across a range of applications, including industrial motor drives, switching power supplies, renewable energy inverters, and construction of efficient high-current bus systems. Its panel-mount form factor makes it suitable for commercial setups, laboratory projects, and manufacturing automation tasks.
Explore more advanced power semiconductors and N-channel MOSFET solutions from IXYS and within the MOSFET category to find tailored components for your electronics and electrical projects.
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