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| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 9.15mm |
| Length | 10.66mm |
| Model | IXTP62N15P |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | HiperFET, Polar |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 62A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 40mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 350W |
| Typical Gate Charge Qg @ Vgs | 70nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
The IXYS IXTP62N15P N-Channel Power MOSFET is engineered for high-current, high-voltage applications in power electronics, industrial drives, and inverter systems. As part of the HiperFET Polar series, this MOSFET combines robust current handling of up to 62 amperes with a maximum drain-source voltage of 150 volts, delivering optimum efficiency and reliability in demanding switching operations.
This enhancement mode transistor supports a fast intrinsic diode, minimizing reverse recovery time. With an ultra-low maximum drain-source resistance of 40 milliohms, it significantly reduces conduction losses during high-current flows. The device comes in the widely adopted TO-220 package, equipped with three pins - drain, source, and gate - designed for straightforward through-hole mounting in power assemblies.
The IXTP62N15P is well-suited for various applications, including motor control, industrial automation, uninterruptible power supplies, and high-efficiency power conversion circuits. Its wide operating temperature range, from -55°C to 175°C, supports operation in both standard industrial and harsh environmental conditions. The transistor features a typical gate charge of 70 nanocoulombs at Vgs, and its structure is optimized for rapid switching, enhancing overall circuit responsiveness.
With a maximum power dissipation capacity of 350 watts, this MOSFET is capable of sustained operation in high-power environments. The device withstands gate-source voltages up to 20 volts and offers reliable performance in automotive and heavy-duty commercial installations, although it does not carry automotive approval by default.
IXYS, recognized for its advanced discrete power semiconductor designs, ensures durability and stable electrical characteristics in the IXTP62N15P. The design is RoHS-compliant and intended for integration into new and retrofit electronics assemblies requiring compact size and dependable power switching.
Industrial and laboratory professionals, power engineers, and product designers will find the IXTP62N15P a strong choice for circuit protection, switching supplies, and control solutions. Browse more IXYS MOSFETs and power semiconductors in the EnvMart electronics portfolio for diversified industrial and high-performance requirements.
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