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IXYS HiperFET Polar Series N-Channel Power MOSFET 62A 150V, 3-Pin TO-220, Enhancement Mode IXTP62N15P

Category MOSFET Brand IXYS Condition New

Specifications

Country of Origin India
Brand IXYS
Height 9.15mm
Length 10.66mm
Model IXTP62N15P
Width 4.83mm
Mount Type Through Hole
Series HiperFET, Polar
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 62A
Maximum Drain Source Voltage Vds 150V
Maximum Drain Source Resistance Rds 40mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 350W
Typical Gate Charge Qg @ Vgs 70nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.5V

Key Features

  • High-performance N-Channel power MOSFET from the HiperFET Polar series.
  • Supports a maximum continuous drain current of 62 amperes for demanding switching applications.
  • Operates up to a drain-source voltage of 150 volts for robust industrial and power electronics use.
  • Features a low maximum drain-source resistance of 40 milliohms.
  • Designed with a standard 3-pin TO-220 package for easy through-hole mounting.
  • Enhancement mode with fast intrinsic diode improves efficiency and switching response.
  • Wide operating temperature range from -55°C to 175°C suitable for harsh environments.
  • Maximum power dissipation of 350 watts enables high-power operation.

Product Description

The IXYS IXTP62N15P N-Channel Power MOSFET is engineered for high-current, high-voltage applications in power electronics, industrial drives, and inverter systems. As part of the HiperFET Polar series, this MOSFET combines robust current handling of up to 62 amperes with a maximum drain-source voltage of 150 volts, delivering optimum efficiency and reliability in demanding switching operations.

This enhancement mode transistor supports a fast intrinsic diode, minimizing reverse recovery time. With an ultra-low maximum drain-source resistance of 40 milliohms, it significantly reduces conduction losses during high-current flows. The device comes in the widely adopted TO-220 package, equipped with three pins - drain, source, and gate - designed for straightforward through-hole mounting in power assemblies.

The IXTP62N15P is well-suited for various applications, including motor control, industrial automation, uninterruptible power supplies, and high-efficiency power conversion circuits. Its wide operating temperature range, from -55°C to 175°C, supports operation in both standard industrial and harsh environmental conditions. The transistor features a typical gate charge of 70 nanocoulombs at Vgs, and its structure is optimized for rapid switching, enhancing overall circuit responsiveness.

With a maximum power dissipation capacity of 350 watts, this MOSFET is capable of sustained operation in high-power environments. The device withstands gate-source voltages up to 20 volts and offers reliable performance in automotive and heavy-duty commercial installations, although it does not carry automotive approval by default.

IXYS, recognized for its advanced discrete power semiconductor designs, ensures durability and stable electrical characteristics in the IXTP62N15P. The design is RoHS-compliant and intended for integration into new and retrofit electronics assemblies requiring compact size and dependable power switching.

Industrial and laboratory professionals, power engineers, and product designers will find the IXTP62N15P a strong choice for circuit protection, switching supplies, and control solutions. Browse more IXYS MOSFETs and power semiconductors in the EnvMart electronics portfolio for diversified industrial and high-performance requirements.

IXYS HiperFET Polar Series N-Channel Power MOSFET 62A 150V, 3-Pin TO-220, Enhancement Mode IXTP62N15P
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Frequently Asked Questions

The IXTP62N15P supports a maximum continuous drain current of 62 amperes, suitable for demanding switching applications.

This MOSFET operates up to a maximum drain-source voltage of 150 volts, making it suitable for high-voltage applications.

It features a low maximum drain-source resistance of 40 milliohms, which helps reduce conduction losses during operation.

The operating temperature range for this model is from -55°C to 175°C, allowing it to function in harsh environments.

It comes in a standard 3-pin TO-220 package, designed for easy through-hole mounting in power assemblies.

The typical gate charge at Vgs is 70 nanocoulombs, which contributes to its efficient switching performance.

The IXTP62N15P has a maximum power dissipation capacity of 350 watts, enabling high-power operation.

This MOSFET can withstand a maximum gate-source voltage of 20 volts, ensuring reliable performance in various applications.

It is well-suited for applications including motor control, industrial automation, uninterruptible power supplies, and high-efficiency power conversion circuits.

The forward voltage of the IXTP62N15P is 1.5 volts, which is relevant for its performance in various circuits.

The dimensions of this model are 9.15 mm in height, 10.66 mm in length, and 4.83 mm in width.

The IXTP62N15P features an enhancement mode N-channel design, which is common for power MOSFETs.

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