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Vishay N-Channel Power MOSFET 150A 40V TO-220 Enhancement, Low RDS, High Junction Temp, SUP40012EL-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.51mm |
| Model | SUP40012EL-GE3 |
| Width | 4.65mm |
| Mount Type | Through Hole |
| Series | SUP40012EL |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 150A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 2.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 130nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Offers a maximum continuous drain current of 150A and a maximum drain-source voltage of 40V.
- Features an enhancement mode N-channel trenchFET design for efficient power switching.
- Low drain-source resistance of 2.3mΩ minimizes conduction losses.
- Robust TO-220 package ensures reliable through-hole mounting and thermal performance.
- Supports high junction temperature up to 175°C, enabling reliable operation in demanding environments.
- Suitable for industrial, power electronics, and high-efficiency energy systems.
- Capable of handling a maximum power dissipation of 150W.
Product Description
The Vishay SUP40012EL-GE3 is a high-performance N-channel enhancement-mode power MOSFET designed for demanding industrial and power electronic applications. With a maximum continuous drain current of 150A and a maximum drain-source voltage rating of 40V, this component is ideal for applications requiring fast, efficient switching and high current handling.
Engineered using TrenchFET technology, the SUP40012EL-GE3 delivers low drain-source resistance of just 2.3mΩ, significantly reducing power loss during conduction and switching. The TO-220 package offers rugged construction suitable for through-hole PCB assembly, providing excellent thermal management and mechanical reliability for long-term operation.
This MOSFET supports a high junction temperature of up to 175°C, making it well-suited for industrial, commercial, and automotive power management systems, DC-DC converters, and high-efficiency energy circuits. It offers a gate charge of 130nC, supporting rapid switching times crucial for modern power designs.
Additional technical advantages include a channel mode of enhancement, a maximum gate-source voltage of 20V, and a maximum power dissipation of 150W. The part is RoHS compliant and does not have automotive standard approval, aligning with its intended use in non-automotive industrial environments.
With dimensions of 10.51mm length, 4.65mm width, and 9.01mm height, the SUP40012EL-GE3 is compact yet robust, allowing effective integration even where space is limited. The three-pin configuration simplifies PCB layout for high-current systems and makes it compatible with a wide range of socket and heat sink options.
Maximum continuous drain current of 150A and drain-source voltage of 40V for high-power switching. Low RDS(on) of 2.3mΩ for minimised conduction losses. TO-220 package with through-hole mount for efficient thermal performance.
High junction temperature (up to 175°C) suitable for demanding applications. Gate charge of 130nC for rapid switching response. Maximum power dissipation of 150W for reliable high-load operation. Ideal for industrial power conversion, motor control, and high-efficiency energy systems.
For engineers designing industrial, laboratory, or commercial systems with stringent efficiency and durability requirements, the Vishay SUP40012EL-GE3 delivers proven performance and reliability. Browse more Vishay MOSFETs and semiconductor solutions in the MOSFETs category at EnvMart for all your high-current switching needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 150A.
It has a maximum drain-source voltage rating of 40V.
The low drain-source resistance is 2.3mΩ, which minimizes conduction losses.
This model can handle a maximum power dissipation of 150W.
The package type is TO-220, suitable for through-hole mounting.
The dimensions are 10.51mm in length, 4.65mm in width, and 9.01mm in height.
It supports a maximum operating temperature of 175°C.
The typical gate charge is 130nC at the specified gate-source voltage.
This MOSFET utilizes an enhancement mode N-channel design.
The minimum operating temperature is -55°C.
This model has a three-pin configuration.
Yes, this MOSFET is RoHS compliant.
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