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DiodesZetex N-Channel MOSFET 35 A 30 V Enhancement 3-Pin SOT-23 ZXMN3B14FTA

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3.05mm
Model ZXMN3B14FTA
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 3.5A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 140mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.5W
Typical Gate Charge Qg @ Vgs 6.7nC
Maximum Gate Source Voltage Vgs -12, +12V
Forward Voltage Vf 950mV

Key Features

  • This MOSFET features a 3-pin SOT-23 surface-mount package for compact PCB integration.
  • It has a low maximum drain-source resistance of 140 milliohms ensuring efficient conduction.
  • The device supports a maximum power dissipation of 1.5 W with a wide operating temperature range from -55°C to 150°C.
  • The typical gate charge is 6.7 nanocoulombs at the specified gate-source voltage for fast switching.
  • It tolerates maximum gate-source voltages of -12 V to +12 V, providing robust gate control.
  • The forward voltage drop is approximately 950 mV, optimizing power efficiency.
  • Its compact physical dimensions measure 3.05 mm in length, 1.4 mm in width, and 1.1 mm in height.
  • This MOSFET is suited for use in industrial, electronic component assemblies, power control, and switching applications.

Product Description

DiodesZetex ZXMN3B14FTA is a high-performance N-Channel MOSFET transistor designed in a 3-pin SOT-23 surface-mount package, providing a compact footprint for space-constrained applications. It supports a maximum continuous drain current of 3.5 A and can withstand up to 30 V between drain and source terminals.

With an enhancement channel mode and a low maximum drain-source resistance of 140 milliohms, it ensures efficient power switching with minimal conduction losses. The device can safely dissipate up to 1.5 W of power and operates reliably across a broad temperature range from -55°C to 150°C, making it suitable for demanding industrial environments.

The typical gate charge of 6.7 nanocoulombs at gate-source voltage assures fast switching speed, which is critical in power management circuits. It can tolerate gate-source voltages up to ±12 V, providing robust control characteristics and protecting gate integrity.

Physically, the ZXMN3B14FTA measures 3.05 mm in length, 1.4 mm in width, and 1.1 mm in height, allowing for dense PCB layouts. It is ideal for applications such as power regulation, motor control, and electronic switching in industrial, manufacturing, HVAC, and laboratory equipment domains.

The device meets standard quality requirements but comes without specific certifications like automotive standards. Its stable operation under high temperature and electrical stresses makes it a reliable choice for professional electronics design and embedded systems.

This MOSFET features a low gate charge and low on-resistance for energy-efficient switching. Its compact SOT-23 package supports surface mounting and ease of integration. Wide operating temperature range supports harsh industrial environments.

High maximum power dissipation enables use in robust power circuitry. Gate-source voltage range protects against excessive voltage stresses. Physical dimensions allow dense PCB assembly and design flexibility. Suitable for power control, switching, motor drives, and electronic circuit applications.

Explore our Electronics & Electricals categories for additional MOSFETs and semiconductor devices from leading brands like DiodesZetex at EnvMart, your trusted source for professional industrial components.

DiodesZetex N-Channel MOSFET 35 A 30 V Enhancement 3-Pin SOT-23 ZXMN3B14FTA
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Frequently Asked Questions

The maximum continuous drain current for the ZXMN3B14FTA is 3.5 A.

This MOSFET can withstand a maximum drain-source voltage of 30 V.

The ZXMN3B14FTA has a maximum power dissipation of 1.5 W.

It operates reliably across a temperature range from -55°C to 150°C.

This MOSFET measures 3.05 mm in length, 1.4 mm in width, and 1.1 mm in height.

The maximum gate-source voltage tolerable by this model is -12 V to +12 V.

The typical gate charge at the specified gate-source voltage is 6.7 nanocoulombs.

The maximum drain-source resistance is 140 milliohms.

It is packaged in a 3-pin SOT-23 surface-mount configuration.

This MOSFET is suitable for power regulation, motor control, and electronic switching applications.

The forward voltage drop is approximately 950 mV, optimizing power efficiency.

The ZXMN3B14FTA features an N-channel enhancement mode.

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