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STMicroelectronics MDmesh K5 Series SuperMESH5 N-Channel MOSFET, 8 A, 950 V, Enhancement Mode, 3-Pin TO-220 STP10N95K5
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | SuperMESH5 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh K5, SuperMESH5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 950V |
| Maximum Drain Source Resistance Rds | 800mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 130W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Designed with an enhancement mode for improved switching performance.
- Features 3-pin TO-220 package suitable for through-hole mounting.
- Maximum power dissipation is rated at 130 W for efficient heat management.
- Operates reliably within a temperature range from -55°C to 150°C.
- Low typical gate charge of 22 nC helps reduce switching losses.
- Maximum drain-source resistance of 800 milliohms ensures efficient conduction.
- Maximum gate-source voltage rating of ±30 V provides robust gate protection.
Product Description
STMicroelectronics STP10N95K5 is a high-performance N-Channel MOSFET from the MDmesh™ K5 series, featuring SuperMESH5™ technology that enhances switching efficiency and durability. Designed in a robust 3-pin TO-220 package for through-hole mounting, it supports a maximum continuous drain current of 8 A and a high drain-source voltage of 950 V, making it suitable for demanding applications requiring efficient power switching.
This MOSFET operates in enhancement mode with a maximum drain-source resistance of 800 milliohms, delivering low conduction losses. It has a typical gate charge of 22 nanocoulombs, which optimizes switching speed while minimizing energy loss. The device is rated for power dissipation up to 130 W, ensuring it manages thermal loads effectively in industrial environments.
The STP10N95K5 is built to operate reliably in harsh conditions with an operating temperature range from -55°C up to 150°C. Its forward voltage is typically 1.5 V, and it provides robust gate-source voltage tolerance of -30 to +30 volts. The compact size, with dimensions 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width, allows easy integration into power supply circuits and industrial electronic assemblies.
This product is ideal for use in industrial electronics, power management, motor control, and automotive electronics where efficient switching and high voltage tolerance are required. It does not carry automotive-specific certification but meets high thermal and electrical standards for various power electronics applications.
Designed with an enhancement mode for improved switching performance. Features 3-pin TO-220 package suitable for through-hole mounting. Maximum power dissipation is rated at 130 W for efficient heat management. Operates reliably within a temperature range from -55°C to 150°C.
Low typical gate charge of 22 nC helps reduce switching losses. Maximum drain-source resistance of 800 milliohms ensures efficient conduction. Maximum gate-source voltage rating of ±30 V provides robust gate protection. Compact dimensions: 15.75 mm height, 10.4 mm length, 4.6 mm width.
Explore more STMicroelectronics MOSFETs and advanced discrete semiconductor components with EnvMart's comprehensive selection for electronics, power control, and industrial automation.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8 A.
It has a maximum drain-source voltage rating of 950 V.
This model uses a 3-pin TO-220 package suitable for through-hole mounting.
The maximum power dissipation is rated at 130 W, allowing for efficient heat management.
It operates reliably within a temperature range from -55°C to 150°C.
The typical gate charge is 22 nC, which helps reduce switching losses.
The maximum drain-source resistance is 800 milliohms, ensuring efficient conduction.
The maximum gate-source voltage rating is ±30 V, providing robust gate protection.
The dimensions are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.
This model features an N-channel type, designed for enhancement mode operation.
It is suitable for applications in industrial electronics, power management, motor control, and automotive electronics.
The forward voltage is typically 1.5 V.
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