Infineon HEXFET N-Channel Power MOSFET 60 V 293 A 375 W Surface Mount 8-Pin TO-263 IRFS3006TRL7PP

Infineon IRFS3006TRL7PP HEXFET N-Channel Power MOSFET is engineered for efficient power management in electronic systems. This surface mount device designed in a TO-263 package delivers a maximum continuous drain current of 293 A and handles voltages up to 60 V, making it suitable for high current switching applications.

The HEXFET technology ensures low on-resistance with a maximum Rds(on) of 2.1 mΩ, significantly reducing conduction losses and improving overall system efficiency. Suitable for industrial and commercial electronics, it operates reliably in harsh temperature conditions from -55°C to 175°C, ensuring durability in demanding environments.

This MOSFET offers a maximum power dissipation of 375 W, enabling it to handle substantial power loads. The typical gate charge of 200 nC allows for fast switching speeds, improving the performance of power conversion circuits. The 8-pin surface mount configuration supports complex circuit designs requiring accurate device control.

With compact dimensions (10.67 mm length, 4.83 mm width, 9.65 mm height), the device fits in space-constrained layouts while providing robust electrical characteristics. The maximum gate-source voltage rating ranges from −20 V to +20 V, ensuring safe and reliable gate drive voltages.

Key applications include motor drives, power supplies, automotive electronics, and other power management solutions requiring efficient N-channel MOSFETs with high current and voltage capabilities. Infineon's HEXFET range maintains industry standards and integrates seamlessly into modern electronic designs.

Features TO-263 package type for surface mount applications. 293 A maximum continuous drain current supports high power loads. Low Rds(on) of 2.1 mΩ reduces conduction losses. Wide operating temperature range from -55°C to 175°C enhances reliability.

Typical gate charge of 200 nC allows fast switching. Maximum power dissipation of 375 W ensures durability under load. Compact 8-pin configuration fits diverse circuit designs. Explore more from our wide selection of discrete semiconductors and MOSFETs to optimize your electronic designs with proven Infineon quality and performance.