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ROHM N-Channel MOSFET 20 V 100 mA Enhancement Mode 3-Pin SOT-723 RUM001L02T2CL

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ROHM N-Channel MOSFET 20 V 100 mA Enhancement Mode 3-Pin SOT-723 RUM001L02T2CL

Name: ROHM N-Channel MOSFET 20 V 100 mA Enhancement Mode 3-Pin SOT-723 RUM001L02T2CL
Brand: ROHM
SKU: 196189
Price: 20.22 USD
Availability: InStock

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Category MOSFETs Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	450μm
Length	1.3mm
Model	RUM001L02T2CL
Width	900μm
Mount Type	Surface
Series	RUM001L02
Maximum Operating Temperature	150°C
Package Type	SOT-723
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	100mA
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	3.5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	150mW
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	1.2V

Key Features

This MOSFET features an N-channel type with surface mount package.
It supports a maximum continuous drain current of 100 mA.
The drain-source voltage rating is 20 V, suitable for low voltage switching.
Maximum power dissipation is 150 mW, ensuring efficient operation.
The device has a maximum drain-source resistance of 3.5 Ω, providing low conduction losses.
Designed to operate within a temperature range from -55°C to 150°C, ensuring reliability across environments.
The maximum gate-source voltage ranges from -8 to +8 V.
Compact dimensions of 1.3 mm length, 900 μm width, and 450 μm height facilitate PCB space savings.

Product Description

ROHM RUM001L02T2CL N-Channel MOSFET is a high-quality discrete semiconductor device optimized for low voltage and low current switching applications in electronic circuits. Packaged in a compact 3-pin SOT-723 surface mount package, this MOSFET supports a maximum continuous drain current of 100 mA and a maximum drain-source voltage of 20 V. Its enhancement mode channel ensures efficient switching behavior with low conduction losses attributable to the 3.5 Ω maximum drain-source resistance.

The device operates reliably across a broad temperature range from -55°C up to 150°C, making it suitable for industrial, electronic instrumentation, telecommunications, and consumer electronics applications that require compact and durable semiconductor solutions.

Physical dimensions include a 1.3 mm length, 900 μm width, and 450 μm height, contributing to easy integration into dense PCB layouts. The MOSFET features a maximum power dissipation rating of 150 mW and a gate-source voltage range from -8 V to +8 V, ensuring robust operation and compatibility with typical driving circuits.

Further, the forward voltage of 1.2 V improves switching efficiency, making this device ideal for use in low power switching applications. Conforming to RoHS standards, it supports environmentally responsible manufacturing and deployment.

This N-Channel MOSFET is designed for surface mount assembly in compact form factors. Typical applications include power management, signal switching, and load driving in electronic devices. Industries such as consumer electronics, telecommunications, and industrial automation benefit from this reliable semiconductor component.

Compact SOT-723 package enables space-saving circuit designs without compromising performance. The wide temperature operating range ensures performance stability under harsh environmental conditions. Explore a wide selection of discrete semiconductor devices and MOSFETs at EnvMart for your industrial and commercial electronics needs.