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Vishay TrenchFET N-Channel MOSFET 100 A 30 V Enhancement Mode 8-Pin SO-8 SIRA90DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 6.25mm |
| Model | SIRA90DP-T1-RE3 |
| Width | 5.26mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 1.15mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 104W |
| Typical Gate Charge Qg @ Vgs | 102nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- TrenchFET Gen IV technology ensures low on-resistance and efficient operation.
- SO-8 8-pin surface-mounted package ideal for compact PCB layouts.
- Maximum power dissipation of 104 W supports high thermal loads.
- Wide operating temperature range from -55°C to 150°C for robust applications.
- Low typical gate charge of 102 nC enables fast switching speeds.
- Maximum drain-source resistance of 1.15 mΩ minimizes conduction losses.
- Channel mode is enhancement type with maximum gate-source voltage of 20 V.
- Forward voltage of 1.1 V and pin count of 8 facilitate precise power control.
Product Description
Vishay SIRA90DP-T1-RE3 is a TrenchFET Generation IV N-Channel MOSFET designed for high-performance semiconductor applications. It features a maximum continuous drain current (Id) of 100 A and a drain-source voltage (Vds) rating of 30 V, making it suitable for power switching and amplification in electronic circuits.
The device is housed in a compact SO-8 surface-mount package with 8 pins, enabling space-saving PCB designs. Its low maximum drain-source resistance (Rds) of 1.15 milliohms helps reduce power losses, enhancing efficiency in power management circuits.
Electrical characteristics include an enhancement mode channel type, typical gate charge of 102 nanocoulombs at Vgs, and a maximum gate-source voltage rating of 20 V, providing dependable gate operation while preventing damage. The MOSFET supports a maximum power dissipation of 104 W and operates reliably across an ambient temperature range from -55°C to 150°C, supporting demanding industrial, automotive (non-automotive standard), and commercial applications.
The device’s physical dimensions are compact with a length of 6.25 mm, width of 5.26 mm, and height of 1.12 mm, making it compatible with space-constrained designs. TrenchFET Gen IV MOSFET technology for reduced conduction losses.
Enhanced switching speed with low typical gate charge. High continuous current handling capacity suitable for power circuits. Wide temperature tolerance for industrial environments. SO-8 package type facilitates surface-mount PCB assembly.
Robust design for reliable operation in power switching applications. Compact physical size for efficient PCB layout. Suitable for electronic components, power management, and discrete semiconductor uses.
This Vishay TrenchFET N-Channel MOSFET is expertly engineered for use in electronics and electrical systems requiring controlled power switching with high current capacity and low loss. It fits well in industrial, laboratory, automotive (non-automotive standard), and manufacturing settings where durable, high-efficiency semiconductor components are needed.
Explore the range of MOSFETs and other semiconductor components on EnvMart to find compatible devices for your discrete semiconductor and power circuitry needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
The maximum drain-source voltage (Vds) rating is 30 V.
It is housed in a SO-8 surface-mount package.
The dimensions are 6.25 mm in length, 5.26 mm in width, and 1.12 mm in height.
The typical gate charge is 102 nC at Vgs.
The maximum power dissipation is 104 W.
It operates within a temperature range of -55°C to 150°C.
The maximum gate-source voltage (Vgs) rating is 20 V.
It features an enhancement mode N-channel type.
The maximum drain-source resistance (Rds) is 1.15 mΩ.
This model is suitable for power switching and amplification in electronic circuits, including industrial and automotive applications.
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