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Vishay TrenchFET N-Channel MOSFET 100 A 30 V Enhancement Mode 8-Pin SO-8 SIRA90DP-T1-RE3

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Vishay TrenchFET N-Channel MOSFET 100 A 30 V Enhancement Mode 8-Pin SO-8 SIRA90DP-T1-RE3

Name: Vishay TrenchFET N-Channel MOSFET 100 A 30 V Enhancement Mode 8-Pin SO-8 SIRA90DP-T1-RE3
Brand: Vishay
SKU: 202640

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Category MOSFETs Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	1.12mm
Length	6.25mm
Model	SIRA90DP-T1-RE3
Width	5.26mm
Mount Type	Surface
Series	TrenchFET
Maximum Operating Temperature	150°C
Package Type	SO-8
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	100A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	1.15mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	104W
Typical Gate Charge Qg @ Vgs	102nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.1V

Key Features

TrenchFET Gen IV technology ensures low on-resistance and efficient operation.
SO-8 8-pin surface-mounted package ideal for compact PCB layouts.
Maximum power dissipation of 104 W supports high thermal loads.
Wide operating temperature range from -55°C to 150°C for robust applications.
Low typical gate charge of 102 nC enables fast switching speeds.
Maximum drain-source resistance of 1.15 mΩ minimizes conduction losses.
Channel mode is enhancement type with maximum gate-source voltage of 20 V.
Forward voltage of 1.1 V and pin count of 8 facilitate precise power control.

Product Description

Vishay SIRA90DP-T1-RE3 is a TrenchFET Generation IV N-Channel MOSFET designed for high-performance semiconductor applications. It features a maximum continuous drain current (Id) of 100 A and a drain-source voltage (Vds) rating of 30 V, making it suitable for power switching and amplification in electronic circuits.

The device is housed in a compact SO-8 surface-mount package with 8 pins, enabling space-saving PCB designs. Its low maximum drain-source resistance (Rds) of 1.15 milliohms helps reduce power losses, enhancing efficiency in power management circuits.

Electrical characteristics include an enhancement mode channel type, typical gate charge of 102 nanocoulombs at Vgs, and a maximum gate-source voltage rating of 20 V, providing dependable gate operation while preventing damage. The MOSFET supports a maximum power dissipation of 104 W and operates reliably across an ambient temperature range from -55°C to 150°C, supporting demanding industrial, automotive (non-automotive standard), and commercial applications.

The device’s physical dimensions are compact with a length of 6.25 mm, width of 5.26 mm, and height of 1.12 mm, making it compatible with space-constrained designs. TrenchFET Gen IV MOSFET technology for reduced conduction losses.

Enhanced switching speed with low typical gate charge. High continuous current handling capacity suitable for power circuits. Wide temperature tolerance for industrial environments. SO-8 package type facilitates surface-mount PCB assembly.

Robust design for reliable operation in power switching applications. Compact physical size for efficient PCB layout. Suitable for electronic components, power management, and discrete semiconductor uses.

This Vishay TrenchFET N-Channel MOSFET is expertly engineered for use in electronics and electrical systems requiring controlled power switching with high current capacity and low loss. It fits well in industrial, laboratory, automotive (non-automotive standard), and manufacturing settings where durable, high-efficiency semiconductor components are needed.

Explore the range of MOSFETs and other semiconductor components on EnvMart to find compatible devices for your discrete semiconductor and power circuitry needs.