onsemi N-Channel Power MOSFET, 38 A, 60 V, Enhancement Mode, TO-252, 3-Pin NVD5C684NLT4G

onsemi NVD5C684NLT4G is a high-performance N-Channel power MOSFET designed for efficient switching and power control in electronic circuits. Featuring a 3-pin TO-252 surface mount package, it is engineered to support continuous drain currents up to 38 A and a maximum drain-source voltage of 60 V, making it suitable for a variety of power management tasks.

This MOSFET employs an enhancement mode channel and offers a low maximum drain-source resistance of 24.3 mΩ, which reduces power losses and improves efficiency in high-load applications. It possesses a typical gate charge of 9.6 nC at Vgs, allowing for fast switching performance while minimizing driving power requirements.

The device operates reliably within a wide temperature range from -55°C minimum up to 175°C maximum, enabling use in harsh industrial, automotive, and commercial environments requiring thermal robustness. Furthermore, it has a maximum power dissipation rating of 27 W correlating to its thermal management capabilities during continuous operation.

Its compact TO-252 form factor simplifies PCB layout for surface mounting, with 3 pins optimized for power and signal connections. The device also features a forward voltage of 1.2 V and a maximum gate-source voltage rating of 20 V to protect against voltage spikes and ensure safe gate operation.

Certified to meet automotive standard AEC-Q101, the NVD5C684NLT4G is well suited to automotive electronics as well as industrial power control systems, consumer electronics, and power supplies. Its reliable performance makes it a preferred choice for designers seeking robust and efficient MOSFET solutions.

Supports maximum continuous drain current of 38 A for robust power handling. Maximum drain source voltage rated at 60 V ensuring reliable operation under high voltage conditions. Equipped with a TO-252 surface mount package with 3 pins for easy PCB integration.

Low maximum drain source resistance of 24.3 milliohms minimizes conduction losses. Enhancement mode channel with typical gate charge of 9.6 nanocoulombs for efficient gate drive. Operating temperature range from -55°C up to 175°C suitable for demanding environments.

Maximum power dissipation of 27 W to handle high power loads safely. Compliant with automotive standard AEC-Q101 confirming suitability for automotive and industrial applications.

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