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Infineon HEXFET Type P-Channel MOSFET 31 A 55 V Enhancement Mode 3-Pin IPAK IRFU5305PBF

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Infineon HEXFET Type P-Channel MOSFET 31 A 55 V Enhancement Mode 3-Pin IPAK IRFU5305PBF

Name: Infineon HEXFET Type P-Channel MOSFET 31 A 55 V Enhancement Mode 3-Pin IPAK IRFU5305PBF
Brand: Infineon
SKU: 196625
Price: 0.79 USD
Availability: InStock

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Category MOSFETs Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	6.1mm
Length	6.6mm
Model	IRFU5305PBF
Width	2.3mm
Mount Type	Through Hole
Series	HEXFET
Maximum Operating Temperature	175°C
Package Type	IPAK
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	31A
Maximum Drain Source Voltage Vds	55V
Maximum Drain Source Resistance Rds	65mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	110W
Typical Gate Charge Qg @ Vgs	63nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.3V
P-channel MOSFET,IRFU5305 31A 55VBrand	International Rectifier

Key Features

Capable of handling a maximum continuous drain current of 31 amperes.
Operates in enhancement mode, optimizing switching performance.
Features low static drain-to-source resistance of 65 milliohms for energy-efficient operation.
Wide gate-to-source voltage range of -20 to +20 volts supports versatile control.
Compact 3-pin IPAK through-hole package suitable for space-constrained applications.
Can dissipate up to 110 watts of power with adequate heat management.
Operates reliably over a temperature range of -55°C to +175°C.
Ideal for power management in consumer electronics and renewable energy systems.

Product Description

Infineon IRFU5305PBF HEXFET Type P-Channel MOSFET delivers high current handling of up to 31 A and a maximum drain-source voltage of 55 V. This MOSFET operates in enhancement mode, providing excellent efficiency and switching characteristics within a compact 3-pin IPAK package. Its low static drain-to-source resistance of 65 mΩ minimizes energy losses, making it suitable for high-performance power electronic designs.

The device supports a wide gate-to-source voltage range from -20 V to +20 V, allowing versatile control options. It can safely dissipate 110 W of power when correctly mounted with cooling mechanisms to optimize heat management. Engineered to operate in extreme environments, this MOSFET maintains performance from -55°C to +175°C, ensuring reliability in diverse applications.

Designed for industrial and commercial uses, the IRFU5305PBF is ideal for power management tasks in consumer electronics, renewable energy installations, electric vehicles, and switching power supplies requiring high-frequency operation. Its robust construction and advanced fabrication techniques ensure low resistance per silicon area, optimizing circuit efficiency and longevity in automation and electrical control systems.

High current handling of 31 A for demanding electronic applications. Enhancement mode operation for improved efficiency. Low on-resistance reduces power loss during operation. Wide gate voltage range enables flexible switching control.

Compact IPAK package suitable for space-limited installations. Power dissipation capacity of 110 W with proper heat sink. Wide operating temperature range from -55°C to 175°C for reliability. Applicable in consumer electronics, renewable energy, and electric vehicle power controls.

Supports high-frequency switching power supply designs. Explore the extensive Infineon MOSFET catalog at EnvMart for optimized semiconductor solutions tailored to your industrial and manufacturing needs.

Explore more products in our MOSFETs category.