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Infineon HEXFET N-Channel Power MOSFET TO-263 Package, 270 A, 60 V, Enhancement Mode, 3-Pin IRLS3036TRLPBF

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Infineon HEXFET N-Channel Power MOSFET TO-263 Package, 270 A, 60 V, Enhancement Mode, 3-Pin IRLS3036TRLPBF

Name: Infineon HEXFET N-Channel Power MOSFET TO-263 Package, 270 A, 60 V, Enhancement Mode, 3-Pin IRLS3036TRLPBF
Brand: Infineon
SKU: 200561
Price: 2.73 USD
Availability: InStock

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Category MOSFETs Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	9.65mm
Length	10.67mm
Model	IRLS3036TRLPBF
Width	4.83mm
Mount Type	Surface
Series	HEXFET
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	270A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	2.8mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	380W
Typical Gate Charge Qg @ Vgs	91nC
Maximum Gate Source Voltage Vgs	-16, +16V
Forward Voltage Vf	1.3V
N-Channel MOSFET, 270 A, 60 V, 3-Pin D2PAK Infineon IRLS3036PBFBrand	Infineon

Key Features

This MOSFET operates in enhancement mode with a 3-pin TO-263 surface mount package.
It supports a maximum continuous drain current of 270 amperes and a voltage of 60 volts.
The device features a low maximum drain source resistance of 2.8 milliohms for efficient conduction.
Maximum power dissipation is rated at 380 watts ensuring high thermal capacity.
Ideal for industrial and automotive power switching and amplification applications.
Designed with an operating temperature range from -55°C to 175°C for robust performance.
Compact dimensions of 10.67 mm length, 9.65 mm height, and 4.83 mm width allow flexible PCB layouts.

Product Description

Infineon IRLS3036TRLPBF is a HEXFET N-Channel Power MOSFET designed for high current and voltage power switching applications. Packaged in a TO-263 surface mount format with 3 pins, it can handle continuous drain currents up to 270 amperes and drain-source voltages up to 60 volts. Its low Rds(on) of 2.8 milliohms reduces conduction losses to enhance system efficiency.

This enhancement-mode MOSFET is suited for industrial, automotive, and power management systems requiring reliable high power performance. Its maximum power dissipation capability of 380 watts and operating temperature range from -55°C to 175°C enable dependable operation in harsh environments.

The device's compact form factor with length 10.67 mm, height 9.65 mm, and width 4.83 mm supports space-optimized PCB assemblies. Typical gate charge of 91 nC at recommended gate voltage ensures fast switching speeds beneficial in high-frequency power circuits.

This MOSFET operates in enhancement mode with a 3-pin TO-263 surface mount package. It supports a maximum continuous drain current of 270 amperes and a voltage of 60 volts. The device features a low maximum drain source resistance of 2.8 milliohms for efficient conduction.

Maximum power dissipation is rated at 380 watts ensuring high thermal capacity. Ideal for industrial and automotive power switching and amplification applications. Designed with an operating temperature range from -55°C to 175°C for robust performance.

Compact dimensions of 10.67 mm length, 9.65 mm height, and 4.83 mm width allow flexible PCB layouts.

This MOSFET is part of Infineon's HEXFET series, known for high efficiency and power density. It is perfectly suited for applications including power supplies, motor control, and other industrial and automotive electronics requiring robust and efficient switching solutions. Explore additional Infineon semiconductor products and power MOSFETs on EnvMart for high-quality electronic component needs.