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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SiDR220EP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8DC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 415A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 0.00082Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 120W |
| Typical Gate Charge Qg @ Vgs | 46.1nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Vishay SiDR220EP-T1-RE3 is a Gen IV TrenchFET® N-Channel MOSFET designed for high-power applications requiring reliable and efficient switching. Operating at a drain current of up to 415 A and a drain-source voltage of 100 V, this depletion mode MOSFET is packaged in an 8-pin PowerPAK SO-8DC surface mount format, facilitating compact device integration.
This MOSFET features low on-resistance at 0.00082 ohms and a forward voltage drop of 1.2 V, which minimizes power loss during conduction. A typical gate charge of 46.1 nC supports rapid switching essential for modern power electronics. It is rated for continuous operation from -55°C to 125°C, making it suitable for demanding industrial, automotive, and power management environments.
The device complies with the automotive standard AEC-Q101, underscoring its reliability and quality. Its maximum power dissipation of 120 W coupled with a top-side cooling feature allows advanced thermal dissipation strategies. This MOSFET is ideal for use in synchronous buck converters, load switching circuits, and other high-power density applications that demand performance and durability.
8-pin surface mount PowerPAK SO-8DC package for space-efficient layout. Supports maximum continuous drain current of 415 A for heavy load handling. Low drain-source resistance reduces conduction losses and improves efficiency.
Wide operating temperature range ensures stable performance in harsh environments. AEC-Q101 automotive standard compliant for high reliability in automotive applications. Typical gate charge of 46.1 nC enables fast and precise control.
Maximum power dissipation of 120 W supports high power switching.
Suitable for industrial uses such as manufacturing power supplies, automotive electronics, and high-performance DC/DC converter circuits. Environmentally robust, this MOSFET supports enhanced cooling methods and is UIS tested for electrical stress tolerance.
Explore EnvMart's comprehensive range of discrete semiconductors including MOSFETs from Vishay for optimized power management solutions.
Interested in this product? Drop us an email and we will let you know when it's available for order.
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