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Vishay N-Channel MOSFET, 415 A, 100 V Depletion Mode, 8-Pin PowerPAK SO-8DC Surface Mount SiDR220EP-T1-RE3

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Vishay N-Channel MOSFET, 415 A, 100 V Depletion Mode, 8-Pin PowerPAK SO-8DC Surface Mount SiDR220EP-T1-RE3

Name: Vishay N-Channel MOSFET, 415 A, 100 V Depletion Mode, 8-Pin PowerPAK SO-8DC Surface Mount SiDR220EP-T1-RE3
Brand: Vishay
SKU: 176958

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Category MOSFETs Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Length	6.15mm
Model	SiDR220EP-T1-RE3
Width	5.15mm
Mount Type	Surface
Maximum Operating Temperature	125°C
Package Type	PowerPAK SO-8DC
Minimum Operating Temperature	-55°C
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	415A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	0.00082Ω
Channel Mode	Depletion
Maximum Power Dissipation Pd	120W
Typical Gate Charge Qg @ Vgs	46.1nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

Features an 8-pin PowerPAK SO-8DC surface mount package for compact high-power applications.
Maximum drain-source resistance (Rds) of 0.00082 ohms ensures efficient conduction.
Operates within a temperature range of -55°C to 125°C for robust industrial performance.
Typical gate charge of 46.1 nC at Vgs ensures fast switching capabilities.
Forward voltage of 1.2 V and maximum power dissipation of 120 W enable efficient thermal management.
Designed to meet AEC-Q101 automotive standards for high reliability.
Suitable for synchronous buck converters, load switching, and high power density applications.

Product Description

Vishay SiDR220EP-T1-RE3 is a Gen IV TrenchFET® N-Channel MOSFET designed for high-power applications requiring reliable and efficient switching. Operating at a drain current of up to 415 A and a drain-source voltage of 100 V, this depletion mode MOSFET is packaged in an 8-pin PowerPAK SO-8DC surface mount format, facilitating compact device integration.

This MOSFET features low on-resistance at 0.00082 ohms and a forward voltage drop of 1.2 V, which minimizes power loss during conduction. A typical gate charge of 46.1 nC supports rapid switching essential for modern power electronics. It is rated for continuous operation from -55°C to 125°C, making it suitable for demanding industrial, automotive, and power management environments.

The device complies with the automotive standard AEC-Q101, underscoring its reliability and quality. Its maximum power dissipation of 120 W coupled with a top-side cooling feature allows advanced thermal dissipation strategies. This MOSFET is ideal for use in synchronous buck converters, load switching circuits, and other high-power density applications that demand performance and durability.

8-pin surface mount PowerPAK SO-8DC package for space-efficient layout. Supports maximum continuous drain current of 415 A for heavy load handling. Low drain-source resistance reduces conduction losses and improves efficiency.

Wide operating temperature range ensures stable performance in harsh environments. AEC-Q101 automotive standard compliant for high reliability in automotive applications. Typical gate charge of 46.1 nC enables fast and precise control.

Maximum power dissipation of 120 W supports high power switching.

Suitable for industrial uses such as manufacturing power supplies, automotive electronics, and high-performance DC/DC converter circuits. Environmentally robust, this MOSFET supports enhanced cooling methods and is UIS tested for electrical stress tolerance.

Explore EnvMart's comprehensive range of discrete semiconductors including MOSFETs from Vishay for optimized power management solutions.