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Infineon N-Channel MOSFET 121 A 40 V 8-Pin TDSON-8 FL ISC028N04NM5ATMA1

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Infineon N-Channel MOSFET 121 A 40 V 8-Pin TDSON-8 FL ISC028N04NM5ATMA1

Name: Infineon N-Channel MOSFET 121 A 40 V 8-Pin TDSON-8 FL ISC028N04NM5ATMA1
Brand: Infineon
SKU: 203323
Price: 0.74 USD
Availability: InStock

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Category MOSFETs Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	4.4mm
Length	3.8mm
Model	ISC028N04NM5ATMA1
Width	1.1mm
Mount Type	Surface
Series	ISC
Maximum Operating Temperature	175°C
Package Type	TDSON-8 FL
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	121A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	2.8mΩ
Maximum Power Dissipation Pd	75W
Typical Gate Charge Qg @ Vgs	38nC
Maximum Gate Source Voltage Vgs	20V

Key Features

This MOSFET features low on-resistance of 2.8 milliohms to maximize efficiency.
It supports a maximum power dissipation of 75 W for high thermal performance.
Operating temperature ranges from -55°C to 175°C for robust application use.
The device has a maximum gate source voltage rating of 20 V and typical gate charge of 38 nC.
Compact dimensions of 3.8 mm length, 4.4 mm height, and 1.1 mm width suit surface mounting.
Designed with high Vth threshold to prevent false turn-on in noisy environments.
100% avalanche tested for superior reliability and ruggedness.
Compliant with RoHS and halogen-free standards ensuring environmental safety.

Product Description

Infineon ISC028N04NM5ATMA1 is a high-performance N-Channel MOSFET designed for power electronics applications requiring efficient switching with low losses. It features a continuous drain current rating of 121 A and a maximum drain source voltage of 40 V, housed in a surface-mount 8-Pin TDSON-8 FL package.

This MOSFET offers superior thermal resistance, with a maximum power dissipation of 75 W and operational temperature ratings ranging from -55°C up to 175°C, making it suitable for demanding industrial, automotive (non-automotive standard), and battery-powered motor drive applications. The device's low on-resistance of 2.8 milliohms reduces conduction losses, while the typical gate charge of 38 nC enables faster switching performance with reduced switching losses.

The high threshold voltage ensures immunity against false turn-on caused by noisy environments, enhancing robustness in various electrical systems. Additionally, the product undergoes comprehensive 100% avalanche testing to ensure reliability in surge conditions.

Its compact dimensions (3.8 mm x 4.4 mm x 1.1 mm) enable efficient board space utilization in printed circuit board designs, beneficial for power management modules and discrete semiconductor circuits.

Low on-resistance for efficient current conduction and reduced energy losses. High avalanche ruggedness tested for reliability under voltage spikes. Wide operating temperature range suitable for harsh environmental conditions.

Compatible with various battery and LV motor drive applications requiring high current handling. Surface mount package facilitates automated assembly in industrial manufacturing. RoHS compliant and halogen-free, meeting environmental standards.

This Infineon MOSFET is ideal for use in industrial power supplies, consumer electronics, automotive electronics, and advanced motor control systems. Discover more power semiconductor solutions by browsing the Electronics & Electricals section on EnvMart.

Explore more products in our MOSFETs category.