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ROHM P-Channel MOSFET 3 A, 12 V Enhancement Mode, Surface Mount, 3-Pin SC-96 RQ5A030APTL

Category MOSFETs Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 950μm
Length 3mm
Model RQ5A030APTL
Width 1.8mm
Mount Type Surface
Series RQ5A030AP
Maximum Operating Temperature 150°C
Package Type SC-96
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 3A
Maximum Drain Source Voltage Vds 12V
Maximum Drain Source Resistance Rds 180mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1W
Typical Gate Charge Qg @ Vgs 16nC
Maximum Gate Source Voltage Vgs -8V
Forward Voltage Vf -1.2V

Key Features

  • This MOSFET features enhancement mode operation for efficient switching.
  • The device has a maximum power dissipation rating of 1 watt.
  • Maximum drain-source resistance is 180 milliohms, optimizing conduction losses.
  • Operating temperature range extends from -55°C to 150°C ensuring reliability.
  • Typical gate charge is 16 nanocoulombs at Vgs, enabling fast switching performance.
  • Compact dimensions include a length of 3 mm, width of 1.8 mm, and height of 950 micrometers for space-saving PCB design.
  • The device is RoHS compliant and designed for surface mount technology applications.
  • No automotive standard certification but suitable for various industrial electronic applications.

Product Description

ROHM RQ5A030APTL is a high-performance P-Channel MOSFET designed for industrial and electronic component applications requiring reliable power switching. This discrete semiconductor device features a maximum continuous drain current of 3 A and a maximum drain-source voltage rating of 12 V, making it suitable for low-voltage power management tasks.

The transistor utilizes enhancement mode channel operation, enhancing switching efficiency and reducing power loss. Packaged in a compact 3-pin SC-96 surface mount type, it enables easy integration into modern PCB layouts with minimal space requirements.

The maximum power dissipation of 1 watt ensures the device can handle moderate power loads, while the 180 milliohms maximum drain-source resistance keeps conduction losses low. The device operates reliably across a broad temperature range from -55°C up to 150°C, accommodating harsh industrial environments.

Typical gate charge of 16 nanocoulombs allows for fast switching speeds making it a fit choice for switching regulator circuits and load switches. Its physical size with dimensions of 3 mm length, 1.8 mm width, and 950 micrometer height supports compact electronics assemblies.

The forward voltage drop of -1.2 V and maximum gate-source voltage of -8 V provide stable gate drive parameters. Although it does not meet automotive standards, it is well suited for general electronics, industrial power control, and circuit protection use cases.

This MOSFET is intended for applications in electronic components, power management, discrete semiconductor circuits, and industrial electronic modules. It enables efficient, compact, and low-loss switching in electronic power circuits.

The surface mount package supports automated PCB assembly and high-density layouts. Operating temperature specifications and robust electrical ratings enhance device reliability in demanding conditions.

This ROHM product provides a reliable solution for engineers seeking a space-conscious, moderate power semiconductor switch. The RQ5A030APTL is part of ROHM's MOSFET series and is backed by comprehensive technical documentation and availability in bulk packaging.

Browse the Electronics & Electricals category at EnvMart for more high-quality discrete semiconductor devices and components from trusted brands like ROHM.

Explore more products in our MOSFETs category.

ROHM P-Channel MOSFET 3 A, 12 V Enhancement Mode, Surface Mount, 3-Pin SC-96 RQ5A030APTL
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