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STMicroelectronics STripFET II N-Channel MOSFET 80 A, 75 V Enhancement, 3-Pin TO-220 STP75NF75

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STMicroelectronics STripFET II N-Channel MOSFET 80 A, 75 V Enhancement, 3-Pin TO-220 STP75NF75

Name: STMicroelectronics STripFET II N-Channel MOSFET 80 A, 75 V Enhancement, 3-Pin TO-220 STP75NF75
Brand: STMicroelectronics
SKU: 189843
Price: 1.69 USD
Availability: InStock

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Category MOSFETs Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	9.15mm
Length	10.4mm
Model	STP75NF75
Width	4.6mm
Mount Type	Through Hole
Series	STripFET II
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	80A
Maximum Drain Source Voltage Vds	75V
Maximum Drain Source Resistance Rds	11mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	300W
Typical Gate Charge Qg @ Vgs	117nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.5V

Key Features

STripFET II technology ensures ultra-low gate charge and low on-resistance.
3-pin TO-220 package suitable for through-hole mounting provides robust connectivity.
Supports enhancement mode operation with a typical gate charge of 117 nC at Vgs.
Maximum power dissipation is rated at 300 W for reliable thermal management.
Operating temperature range spans from -55°C to 175°C for versatile industrial applications.
Maximum drain-source resistance of 11 milliohms provides high efficiency.
Maximum gate-source voltage rating of ±20 V safeguards gate integrity.
Forward voltage is typically 1.5 V ensuring low voltage drop during conduction.

Product Description

STMicroelectronics STP75NF75 is a high-performance STripFET™ II N-Channel MOSFET designed for robust electronic and power management applications. This device supports a continuous drain current (Id) of 80 A and withstands a maximum drain-source voltage (Vds) of 75 V in an enhancement mode configuration, packaged in a durable 3-pin TO-220 format facilitating through-hole mounting techniques.

The device features ultra-low gate charge and a minimal on-resistance of 11 mΩ, offering superior efficiency and thermal performance. It can dissipate up to 300 W of power, ensuring reliable operation in demanding environments. The typical gate charge (Qg) at Vgs is 117 nC, optimizing switching performance.

Its operating temperature range is from -55°C to 175°C, making it suitable for a wide array of industrial, manufacturing, and power supply applications. The MOSFET’s compact physical dimensions are 10.4 mm in length, 4.6 mm in width, and 9.15 mm in height. It features a maximum gate-source voltage rating of ±20 V, enhancing device reliability under varying electrical stresses.

Key applications include power switching, motor control, and power conversion in electronic circuits requiring efficient, compact, and high-current semiconductor devices. STripFET II technology for low gate charge and low on-resistance.

High continuous drain current of 80 A supports demanding power applications. Maximum power dissipation of 300 W enables effective thermal management. Wide operating temperature range suited for harsh industrial environments.

Enhanced reliability with tight gate-source voltage tolerances. Compact TO-220 package for easy integration in through-hole PCB layouts. Minimal forward voltage drop maximizes system efficiency. High voltage and current capability for versatile usage scenarios.

Ideal for industrial, manufacturing, and power conversion applications. Explore more MOSFET options and related power semiconductor products in the Electronics & Electricals category on EnvMart for advanced industrial and commercial circuit designs.

Explore more products in our MOSFETs category.